H5ANAG4NBJR-RDC vs H5ANAG4NBJR-UHC Vergleich
Detaillierter Direktvergleich von H5ANAG4NBJR-RDC von SK hynix und H5ANAG4NBJR-UHC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG4NBJR-RDC | H5ANAG4NBJR-UHC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,75 | $8,09 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb (2 GB) | 4 Gbit |
| Speicherorganisation | 4G x 4 | 256M x16 |
| Supply Voltage VDD | 1.2 V | — |
| Datenrate | 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) | — |
| Gehäuse | 78-ball FBGA | FBGA-96 (PBGA96) |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Prefetch | 16n (bank group architecture) | — |
| Schnittstelle | SSTL-12 | CMOS, DDR4 (double data rate) |
| Eigenschaften | Bank groups, CA parity, data CRC, ODT, DLL-off mode | — |
| Refresh | Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] | — |
| Operating Temperature (case) | -40C to +85C (industrial; extended to 95C per datasheet conditions) | — |
| Temperature Grade Suffix | RDC - industrial temperature, lead-free, halogen-free | — |
| RoHS-Status | Compliant (lead-free / halogen-free per RDC suffix) | Compliant |
| VDDQ | 1.2 V | — |
| Product Family | SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series | — |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V (nominal 1.2 V) |
| Clock / Data Rate | — | 1.6 GHz |
| Betriebstemperatur | — | -40C to +95C |
| Data Mask (DM) | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Die Termination (ODT) | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Self-Refresh | — | Yes |
| CAS-Latenz | — | [DATA_NEEDED: CAS Latency / speed bin detail] |