H5ANAG6NBJR-RDC vs H5ANAG6NCR-RDC Comparison

Detailed side-by-side comparison of H5ANAG6NBJR-RDC by SK hynix and H5ANAG6NCR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG6NBJR-RDC H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC ✓ Active

Specification Comparison

Parameter H5ANAG6NBJR-RDC H5ANAG6NCR-RDC
Brand SK hynix SK hynix
Category DRAM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $9.60 $72.10
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Organization 16Gb x16 —
Density 16 Gb —
Data Rate 2666 Mbps (speed grade -RDC) 3200 Mbps (PC4-25600 class)
Supply Voltage (VDD) 1.2 V 1.2 V
Interface Synchronous, double data rate —
Clocking Fully synchronous to both clock edges —
Package FBGA (Ball Grid Array), surface mount 96-ball FBGA
Mounting Type Surface Mount Surface Mount
Technology CMOS —
Standard JEDEC DDR4 SDRAM —
Application Main memory —
Operating Temperature [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: Operating Temperature Range]
On-Die Termination (ODT) Supported (DDR4 feature) —
Bank Group Architecture DDR4 bank groups (per JEDEC DDR4) —
RoHS Status [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS Status]
Memory Size — 16 Gb (2 GB)
Organization — 1G x 16
Package Body — Rectangular, 8 mm width
Maximum Standby Current — 0.074 A
Number of Terminals (Balls) — 96
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask (DM) Function — Yes
Dynamic On-Chip Termination (ODT) — Yes
ZQ Calibration — Yes
CRC Function — Yes
Write Leveling — Yes
Refresh Interval — [DATA_NEEDED: Refresh Interval]

Datasheets & Resources

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