H5ANAG6NBJR-RDC vs H5ANAG6NCR-RDC 对比
详细并排对比 H5ANAG6NBJR-RDC 出自 SK hynix 和 H5ANAG6NCR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NBJR-RDC | H5ANAG6NCR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.60 | $72.10 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 16Gb x16 | — |
| Density | 16 Gb | — |
| 数据速率 | 2666 Mbps (speed grade -RDC) | 3200 Mbps (PC4-25600 class) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| 接口 | Synchronous, double data rate | — |
| Clocking | Fully synchronous to both clock edges | — |
| 封装 | FBGA (Ball Grid Array), surface mount | 96-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Standard | JEDEC DDR4 SDRAM | — |
| Application | Main memory | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: Operating Temperature Range] |
| On-Die Termination (ODT) | Supported (DDR4 feature) | — |
| Bank Group Architecture | DDR4 bank groups (per JEDEC DDR4) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS Status] |
| 存储容量 | — | 16 Gb (2 GB) |
| 存储组织 | — | 1G x 16 |
| Package Body | — | Rectangular, 8 mm width |
| Maximum Standby Current | — | 0.074 A |
| Number of Terminals (Balls) | — | 96 |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Refresh Interval | — | [DATA_NEEDED: Refresh Interval] |