H5ANAG6NCR-PBC vs H5ANAG6NBJR-RDC Comparison

Detailed side-by-side comparison of H5ANAG6NCR-PBC by SK hynix and H5ANAG6NBJR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG6NBJR-RDC H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC ✓ Active

Specification Comparison

Parameter H5ANAG6NCR-PBC H5ANAG6NBJR-RDC
Brand SK hynix SK hynix
Category Memory ICs DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $70.20 $9.60
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 16Gb (2GB) 16 Gb
Organization x16 (1G x 16) —
Supply Voltage 1.14 V to 1.26 V (nominal 1.2 V) —
Transfer Rate 3200 Mbps (family, per XNCR datasheet; PBC speed grade [DATA_NEEDED: exact speed grade Mbps]) —
Package FBGA-96 FBGA (Ball Grid Array), surface mount
Number of Terminals 96 balls —
Operating Temperature 0C to 85C [DATA_NEEDED: Operating Temperature Range]
Mounting Type Surface Mount Surface Mount
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Yes —
Dynamic ODT Yes —
ZQ Calibration Yes —
CRC Function Yes —
Write Leveling Yes —
RoHS Status Compliant [DATA_NEEDED: RoHS Status]
Maximum Standby Current [DATA_NEEDED: maximum standby current for PBC speed grade] —
CAS Latency [DATA_NEEDED: CAS latency for PBC speed grade] —
Memory Organization — 16Gb x16
Data Rate — 2666 Mbps (speed grade -RDC)
Supply Voltage (VDD) — 1.2 V
Interface — Synchronous, double data rate
Clocking — Fully synchronous to both clock edges
Technology — CMOS
Standard — JEDEC DDR4 SDRAM
Application — Main memory
On-Die Termination (ODT) — Supported (DDR4 feature)
Bank Group Architecture — DDR4 bank groups (per JEDEC DDR4)

Datasheets & Resources

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