H5ANAG6NCR-PBC vs H5ANAG6NBJR-RDC 对比

详细并排对比 H5ANAG6NCR-PBC 出自 SK hynix 和 H5ANAG6NBJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG6NCR-PBC H5ANAG6NCR-PBC - 16Gb DDR4 SDRAM x16, FBGA-96 | SK hynix

H5ANAG6NCR-PBC - 16Gb DDR4 SDRAM x16, FBGA-96 | SK hynix

H5ANAG6NCR-PBC ✓ 量产中
SK hynix
H5ANAG6NBJR-RDC H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC ✓ 量产中

规格对比

参数 H5ANAG6NCR-PBC H5ANAG6NBJR-RDC
品牌 SK hynix SK hynix
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $70.20 $9.60
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16Gb (2GB) 16 Gb
存储组织 x16 (1G x 16) —
电源电压 1.14 V to 1.26 V (nominal 1.2 V) —
Transfer Rate 3200 Mbps (family, per XNCR datasheet; PBC speed grade [DATA_NEEDED: exact speed grade Mbps]) —
封装 FBGA-96 FBGA (Ball Grid Array), surface mount
Number of Terminals 96 balls —
工作温度 0C to 85C [DATA_NEEDED: Operating Temperature Range]
安装类型 Surface Mount Surface Mount
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Yes —
Dynamic ODT Yes —
ZQ Calibration Yes —
CRC Function Yes —
Write Leveling Yes —
RoHS 状态 Compliant [DATA_NEEDED: RoHS Status]
Maximum Standby Current [DATA_NEEDED: maximum standby current for PBC speed grade] —
CAS 延迟 [DATA_NEEDED: CAS latency for PBC speed grade] —
Memory Organization — 16Gb x16
数据速率 — 2666 Mbps (speed grade -RDC)
Supply Voltage (VDD) — 1.2 V
接口 — Synchronous, double data rate
Clocking — Fully synchronous to both clock edges
Technology — CMOS
Standard — JEDEC DDR4 SDRAM
Application — Main memory
On-Die Termination (ODT) — Supported (DDR4 feature)
Bank Group Architecture — DDR4 bank groups (per JEDEC DDR4)

数据手册与资源

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