H5ANAG6NCR-RDC vs H5ANAG8NCJR-XNC Comparison
Detailed side-by-side comparison of H5ANAG6NCR-RDC by SK hynix and H5ANAG8NCJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5ANAG6NCR-RDC | H5ANAG8NCJR-XNC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $72.10 | $65.63 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 16 Gb (2 GB) | — |
| Organization | 1G x 16 | 2G x 8 |
| Data Rate | 3200 Mbps (PC4-25600 class) | 3200 MT/s (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Package | 96-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| Package Body | Rectangular, 8 mm width | — |
| Maximum Standby Current | 0.074 A | — |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Terminals (Balls) | 96 | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| RoHS Status | [DATA_NEEDED: RoHS Status] | Compliant |
| Operating Temperature | [DATA_NEEDED: Operating Temperature Range] | 0C to +95C |
| Refresh Interval | [DATA_NEEDED: Refresh Interval] | — |
| Density | — | 16 Gbit |
| Process Node | — | 1z nm (non-EUV) |
| Die Bit Density | — | 0.296 Gb/mm2 |
| Peak Bandwidth (per 64-bit channel) | — | 25.6 GB/s at DDR4-3200 |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Refresh | — | [DATA_NEEDED: refresh specification] |
| Base Part Number Family | — | H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM) |
| Speed Grade Suffix | — | -XNC (0~95C commercial) |