H5ANAG6NCR-RDC vs H5ANAG8NCJR-XNC Vergleich
Detaillierter Direktvergleich von H5ANAG6NCR-RDC von SK hynix und H5ANAG8NCJR-XNC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NCR-RDC | H5ANAG8NCJR-XNC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $72,10 | $65,63 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Speichergröße | 16 Gb (2 GB) | — |
| Speicherorganisation | 1G x 16 | 2G x 8 |
| Datenrate | 3200 Mbps (PC4-25600 class) | 3200 MT/s (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Gehäuse | 96-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| Package Body | Rectangular, 8 mm width | — |
| Maximum Standby Current | 0.074 A | — |
| Montageart | Surface Mount | Surface Mount |
| Number of Terminals (Balls) | 96 | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | Compliant |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | 0C to +95C |
| Refresh Interval | [DATA_NEEDED: Refresh Interval] | — |
| Density | — | 16 Gbit |
| Process Node | — | 1z nm (non-EUV) |
| Die Bit Density | — | 0.296 Gb/mm2 |
| Peak Bandwidth (per 64-bit channel) | — | 25.6 GB/s at DDR4-3200 |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Refresh | — | [DATA_NEEDED: refresh specification] |
| Base Part Number Family | — | H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM) |
| Speed Grade Suffix | — | -XNC (0~95C commercial) |