H5ANAG8NBJR-VKC vs H5ANAG8NCMR-VKC Comparison

Detailed side-by-side comparison of H5ANAG8NBJR-VKC by SK hynix and H5ANAG8NCMR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG8NCMR-VKC H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC ✓ Active

Specification Comparison

Parameter H5ANAG8NBJR-VKC H5ANAG8NCMR-VKC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.60 $8.05
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit —
Organization 2G x 8 —
Speed Grade DDR4-2666 (2666 Mbps/pin) VK (per SK hynix speed-bin suffix)
Supply Voltage 1.14 V to 1.26 V (VDDQ) —
Clock Frequency 1.6 GHz (internal interface per distributor data) —
Operating Temperature 0C to +85C [DATA_NEEDED: operating temperature range]
Package FBGA-78 FBGA-78
Mounting Type Surface Mount Surface Mount
Standby Current 30 mA (operating, per distributor listing) —
Auto Self-Refresh Yes —
Data Mask Function Yes —
Dynamic On-Chip Termination Yes —
Asynchronous Reset Yes —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
Auto Precharge Yes —
RoHS Status Compliant, Lead-Free and Halogen-Free [DATA_NEEDED: RoHS status]
Refresh Interval [DATA_NEEDED: tREFI refresh interval] —
Memory Size — 16 Gb
Memory Organization — 2G x 8
Data Rate — 2666 Mbps/pin (DDR4-2666)
Supply Voltage (VDD) — 1.2 V
I/O Voltage (VDDQ) — 1.2 V
Power Class — Normal Power
Bank Groups — 4
Banks Total — 16
CAS Latency — [DATA_NEEDED: CAS latency for VK speed bin]
Packaging — [DATA_NEEDED: standard packing quantity]
Manufacturer Process — CMOS DRAM

Datasheets & Resources

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