H5ANAG8NBJR-VKC vs H5ANAG8NCMR-VKC Vergleich
Detaillierter Direktvergleich von H5ANAG8NBJR-VKC von SK hynix und H5ANAG8NCMR-VKC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG8NBJR-VKC | H5ANAG8NCMR-VKC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,60 | $8,05 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| Speicherorganisation | 2G x 8 | — |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) | VK (per SK hynix speed-bin suffix) |
| Versorgungsspannung | 1.14 V to 1.26 V (VDDQ) | — |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) | — |
| Betriebstemperatur | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | FBGA-78 | FBGA-78 |
| Montageart | Surface Mount | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS-Status | Compliant, Lead-Free and Halogen-Free | [DATA_NEEDED: RoHS status] |
| Refresh Interval | [DATA_NEEDED: tREFI refresh interval] | — |
| Speichergröße | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| Datenrate | — | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Power Class | — | Normal Power |
| Bank Groups | — | 4 |
| Banks Total | — | 16 |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency for VK speed bin] |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |
| Manufacturer Process | — | CMOS DRAM |