H5ANAG8NBJR-VKC vs K4AAG085WM-BCWE Comparison
Detailed side-by-side comparison of H5ANAG8NBJR-VKC by SK hynix and K4AAG085WM-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5ANAG8NBJR-VKC | K4AAG085WM-BCWE |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.60 | $7.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Organization | 2G x 8 | 2G x 8 |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) | — |
| Supply Voltage | 1.14 V to 1.26 V (VDDQ) | 1.2 V |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) | — |
| Operating Temperature | 0C to +85C | 0C to +85C |
| Package | FBGA-78 | 78FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS Status | Compliant, Lead-Free and Halogen-Free | [DATA_NEEDED: RoHS status] |
| Refresh Interval | [DATA_NEEDED: tREFI refresh interval] | — |
| Data Rate | — | 3200 Mbps (DDR4-3200) |
| Interface | — | DDR4 (JEDEC-standard) |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| MSL Level | — | [DATA_NEEDED: MSL level] |