H5TC4G63AFR-PBJ vs H5TC4G63AFR-G7A Comparison

Detailed side-by-side comparison of H5TC4G63AFR-PBJ by SK hynix and H5TC4G63AFR-G7A by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63AFR-PBJ

H5TC4G63AFR-PBJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBJ βœ“ Active
SK hynix
H5TC4G63AFR-G7A

H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A βœ“ Active

Specification Comparison

Parameter H5TC4G63AFR-PBJ H5TC4G63AFR-G7A
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.50 $6.50
Memory Type DDR3L SDRAM DDR3L SDRAM
Memory Size 4 Gb (256M x 16) β€”
Supply Voltage 1.35 V 1.35V
Package 96-ball TFBGA 96-ball FBGA
Temperature Grade Industrial (-40Β°C to +95Β°C) β€”
Refresh Cycles 8192 β€”
Package Shape Rectangular β€”
Number of Terminals 96 β€”
Data Rate [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] 1600 Mbps (PC3-12800)
CAS Latency [DATA_NEEDED: CAS Latency] Programmable (e.g., 11)
Access Time 0.225 ns (from H5TC4G63AFR-PBR datasheet) β€”
Auto Self-Refresh Yes β€”
Data Mask Yes β€”
Auto Precharge Yes β€”
Asynchronous Reset Yes β€”
Dynamic On-Chip Termination Yes β€”
ZQ Calibration Yes β€”
Write Leveling Yes β€”
RoHS Status [DATA_NEEDED: RoHS Status] β€”
Density β€” 4Gb
Organization β€” 256M x 16
Operating Temperature β€” 0Β°C to 95Β°C (case)
Burst Length β€” 8 and 4
Refresh Period β€” 7.8us at 85Β°C
On-Die Termination β€” Supported
RoHS β€” Compliant
Lead-Free β€” Yes
Halogen-Free β€” Yes
Process Technology β€” CMOS

Datasheets & Resources

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