H5TC4G63CFR-XXJ vs K4B4G1646E-BYMA Comparison

Detailed side-by-side comparison of H5TC4G63CFR-xxJ by SK hynix and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63CFR-xxJ H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-xxJ ✓ Active
Samsung Electronics
K4B4G1646E-BYMA K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA ✓ Active

Specification Comparison

Parameter H5TC4G63CFR-xxJ K4B4G1646E-BYMA
Brand SK hynix Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.90 $14.32
Memory Type DDR3L SDRAM DDR3L SDRAM
Density 4 Gb 4 Gb
Organization 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V + 0.100 / - 0.067V —
Clock Input Fully differential (CK, CK#) —
Data Strobe Differential (DQS, DQS#) —
On-Chip DLL Yes —
DM Mask Yes —
Package 96-ball FBGA FBGA-96
Operating Temperature Range 0°C to 95°C (case) —
RoHS Compliant Compliant
Lead-Free Yes —
Halogen Free Yes —
Speed Grade [DATA_NEEDED: speed grade for -xxJ suffix] —
CAS Latency [DATA_NEEDED: CAS latency options] [DATA_NEEDED: CAS Latency]
Burst Length 8 and 4 (with burst chop) [DATA_NEEDED: Burst Length]
On-Die Termination Yes —
Refresh Auto-refresh and self-refresh —
Supply Voltage — 1.35 V (1.28 V to 1.575 V)
Clock Frequency — 933 MHz
Data Rate — 1866 Mbps/pin
Operating Temperature — 0°C to +95°C
Operating Current — 14 mA
Standby Current — 2 mA, 3 mA
Mounting Type — Surface Mount
Number of Pins — 96

Datasheets & Resources

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