H5TC4G63MFR-PBA vs H5TC4G63AFR-PBR Comparison
Detailed side-by-side comparison of H5TC4G63MFR-PBA by SK hynix and H5TC4G63AFR-PBR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5TC4G63MFR-PBA
H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
H5TC4G63MFR-PBA β Active
Specification Comparison
| Parameter | H5TC4G63MFR-PBA | H5TC4G63AFR-PBR |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $5.91 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | β |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | β |
| Data Rate | 1866 Mbps (PC3L-14900) | 1600 Mbps (PC3L-12800) |
| Package | 96-ball FBGA | 96-ball FBGA (PBGA96) |
| Number of Banks | 8 | 8 |
| Burst Length | BL8, BL4 (with burst chop) | 8 (BL8) with burst chop (BC4) |
| CAS Latency (CL) | Programmable | β |
| CAS Write Latency (CWL) | Programmable | β |
| Additive Latency | Programmable | β |
| On-Die Termination (ODT) | Yes | β |
| ZQ Calibration | Yes | β |
| Write Leveling | Yes | β |
| Auto Self-Refresh | Yes | β |
| Temperature-Compensated Self-Refresh | Yes | β |
| Process Technology | 30nm-class | β |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | β |
| Total Capacity | β | 4Gb |
| Supply Voltage | β | 1.35V (1.5V compatible) |
| CAS Latency | β | 11 |
| tRCD/tRP | β | 11 |
| Clock Frequency | β | 800 MHz |
| tCK | β | 1.25 ns |
| tRCD | β | 13.125 ns |
| Refresh Interval | β | 7.8us at 85C, 3.9us at 95C |
| Package Dimensions | β | 13.5mm x 9.0mm |
| Ball Pitch | β | 0.8mm |
| I/O Interface | β | SSTL-15 |
| Operating Temperature | β | 0C to +95C |
| RoHS | β | Compliant |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |