H5TC4G63MFR-PBA vs K4B4G1646E-BYK0 Comparison
Detailed side-by-side comparison of H5TC4G63MFR-PBA by SK hynix and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5TC4G63MFR-PBA
H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
H5TC4G63MFR-PBA β ActiveSamsung Electronics
K4B4G1646E-BYK0
K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK0 β ActiveSpecification Comparison
| Parameter | H5TC4G63MFR-PBA | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $1.80 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | β |
| Data Rate | 1866 Mbps (PC3L-14900) | DDR3-1600 (800 MHz) |
| Package | 96-ball FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Number of Banks | 8 | β |
| Burst Length | BL8, BL4 (with burst chop) | 8 (fixed), 4 (burst chop) |
| CAS Latency (CL) | Programmable | β |
| CAS Write Latency (CWL) | Programmable | β |
| Additive Latency | Programmable | β |
| On-Die Termination (ODT) | Yes | β |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | β |
| Auto Self-Refresh | Yes | β |
| Temperature-Compensated Self-Refresh | Yes | β |
| Process Technology | 30nm-class | β |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | β |
| Supply Voltage | β | 1.35 V (1.283 V to 1.45 V) |
| Operating Temperature | β | 0Β°C to +95Β°C (TC) |
| CAS Latency | β | 11 (CL-tRCD-tRP) |
| On-Die Termination | β | Yes (dynamic ODT) |
| Auto Precharge | β | Yes |
| Self-Refresh | β | Yes |
| Asynchronous Reset | β | Yes |
| Data Mask | β | Yes |
| RoHS | β | Compliant |