H5TC4G63MFR-PBA vs K4B4G1646E-BYK0 Comparison
Detailed side-by-side comparison of H5TC4G63MFR-PBA by SK hynix and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5TC4G63MFR-PBA | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | — |
| Data Rate | 1866 Mbps (PC3L-14900) | DDR3-1600 (800 MHz) |
| Package | 96-ball FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Number of Banks | 8 | — |
| Burst Length | BL8, BL4 (with burst chop) | 8 (fixed), 4 (burst chop) |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| Supply Voltage | — | 1.35 V (1.283 V to 1.45 V) |
| Operating Temperature | — | 0°C to +95°C (TC) |
| CAS Latency | — | 11 (CL-tRCD-tRP) |
| On-Die Termination | — | Yes (dynamic ODT) |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |