H5TC4G63MFR-PBA vs K4B4G1646E-BYK0 比較
詳細並排比較 H5TC4G63MFR-PBA 由 SK hynix 與 K4B4G1646E-BYK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5TC4G63MFR-PBA | K4B4G1646E-BYK0 |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| 組織 | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | — |
| 資料速率 | 1866 Mbps (PC3L-14900) | DDR3-1600 (800 MHz) |
| 封裝 | 96-ball FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Number of Banks | 8 | — |
| Burst Length | BL8, BL4 (with burst chop) | 8 (fixed), 4 (burst chop) |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| 供應電壓 | — | 1.35 V (1.283 V to 1.45 V) |
| 工作溫度 | — | 0°C to +95°C (TC) |
| CAS 延遲 | — | 11 (CL-tRCD-tRP) |
| On-Die Termination | — | Yes (dynamic ODT) |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |