IAUA120N04S5N014AUMA1 vs IAUC120N04S6N009ATMA1 Comparison
Detailed side-by-side comparison of IAUA120N04S5N014AUMA1 by Infineon and IAUC120N04S6N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUA120N04S5N014AUMA1
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΞ© Automotive MOSFET | Infineon
IAUA120N04S5N014AUMA1 β ActiveInfineon
IAUC120N04S6N009ATMA1
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΞ© OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 β ActiveSpecification Comparison
| Parameter | IAUA120N04S5N014AUMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.18 | $1.60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUA120N04S5N014AUMA1 | β |
| Series | OptiMOSβ’ 5 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | β |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25Β°C | 120 A | β |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | 1.4 mΞ© | β |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25Β°C | 136 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C [DATA_NEEDED: confirmed min/max from datasheet] | β |
| Package | PG-HSOF-5-2 (sTOLL) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 5 + Tab (6 effective) | β |
| Gate Drive | Enhancement Mode | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Avalanche Rated | Yes (100% avalanche tested) | β |
| Part Family | β | OptiMOS 6 40V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D, Tc) | β | 120 A |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | β | 0.9 mΞ© |
| Gate Threshold Voltage V_GS(th) typ | β | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | β | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | β | 150 W |
| Thermal Resistance R_thJC max | β | 1.0 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| RoHS | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes (per Infineon product page) |