IAUA120N04S5N014AUMA1 vs IAUC120N04S6N009ATMA1 Comparação
Comparação detalhada lado a lado de IAUA120N04S5N014AUMA1 por Infineon e IAUC120N04S6N009ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
IAUA120N04S5N014AUMA1 ✓ AtivoInfineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUA120N04S5N014AUMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,18 | $1,60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUA120N04S5N014AUMA1 | — |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C | 120 A | — |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | 1.4 mΩ | — |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C | 136 W | — |
| Faixa de temperatura de operação | -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] | — |
| Encapsulamento | PG-HSOF-5-2 (sTOLL) | PG-TDSON-8-33 (5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Contagem de pinos | 5 + Tab (6 effective) | — |
| Gate Drive | Enhancement Mode | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Status RoHS | Compliant | — |
| Nível MSL | [DATA_NEEDED: MSL rating] | 1 |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Part Family | — | OptiMOS 6 40V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 120 A |
| Corrente de dreno pulsada | — | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | — | 0.9 mΩ |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | — | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | — | 150 W |
| Thermal Resistance R_thJC max | — | 1.0 K/W |
| Temperatura de junção de operação | — | -55 °C to +175 °C |
| RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes (per Infineon product page) |