IAUA120N04S5N014AUMA1 vs IAUC120N04S6N009ATMA1 对比

详细并排对比 IAUA120N04S5N014AUMA1 出自 Infineon 和 IAUC120N04S6N009ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUA120N04S5N014AUMA1 IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon

IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon

IAUA120N04S5N014AUMA1 ✓ 量产中
Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 量产中

规格对比

参数 IAUA120N04S5N014AUMA1 IAUC120N04S6N009ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.18 $1.60
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUA120N04S5N014AUMA1 —
Series OptiMOS™ 5 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (V<sub>DSS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V 1.4 mΩ —
Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C 136 W —
工作温度范围 -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] —
封装 PG-HSOF-5-2 (sTOLL) PG-TDSON-8-33 (5x6 mm)
安装类型 Surface Mount Surface Mount
引脚数量 5 + Tab (6 effective) —
Gate Drive Enhancement Mode —
Automotive Qualification AEC-Q101 AEC-Q101
RoHS 状态 Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] 1
Avalanche Rated Yes (100% avalanche tested) —
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
脉冲漏极电流 — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
工作结温 — -55 °C to +175 °C
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

数据手册与资源

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