IAUC100N04S6L014ATMA1 vs IAUC28N08S5L230ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L014ATMA1 by Infineon and IAUC28N08S5L230ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ ActiveInfineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUC100N04S6L014ATMA1 | IAUC28N08S5L230ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V | — |
| Transistor Type | N-Channel MOSFET | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| Operating Temperature Range | -55C to +175C | — |
| Package | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8-33 (5x6 mm SSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | OptiMOS-5 Power MOSFET |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Series | — | OptiMOS-5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | — | 28 A |
| Pulsed Drain Current (I<sub>DM</sub>) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | — | 23 mΩ (typ) |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | — | 2.5 V |
| Gate Charge (Q<sub>g</sub>, typ) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | — | 38 W |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| Automotive Qualified | — | Yes (AEC-Q101) |