IAUC100N04S6L025ATMA1 vs IAUCN04S7N012ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L025ATMA1 by Infineon and IAUCN04S7N012ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β Active
Specification Comparison
| Parameter | IAUC100N04S6L025ATMA1 | IAUCN04S7N012ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $1.18 |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOS-7 (trench) |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | β |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | 1.2 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25C | 62 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-34 (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A |
| On-State Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS absolute max] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C [DATA_NEEDED: junction temperature max from datasheet] |
| Transistor Grade | β | Automotive (AEC-Q101) |
| Power Dissipation (Ptot) | β | [DATA_NEEDED: Ptot at TC=25Β°C] |
| Thermal Resistance RΞΈJA | β | [DATA_NEEDED: RΞΈJA on JEDEC PCB] |
| Halogen-Free | β | Yes |