IAUC100N04S6L025ATMA1 vs IAUCN04S7N012ATMA1 比較
詳細な並列比較: IAUC100N04S6L025ATMA1 メーカー: Infineon および IAUCN04S7N012ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUC100N04S6L025ATMA1 | IAUCN04S7N012ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.62 | $1.18 |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOS-7 (trench) |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | 1.2 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| 動作接合温度 | -55 C to +175 C | — |
| パッケージ | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-34 (8-PowerTDFN) |
| 実装タイプ | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSLレベル | 1 (per JEDEC J-STD-020) | 1 |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| On-State Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| 動作温度範囲 | — | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] |
| Transistor Grade | — | Automotive (AEC-Q101) |
| 消費電力（Ptot） | — | [DATA_NEEDED: Ptot at TC=25°C] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: RθJA on JEDEC PCB] |
| ハロゲンフリー | — | Yes |