IAUC100N08S5N043ATMA1 vs IAUC60N06S5L073ATMA1 Comparison

Detailed side-by-side comparison of IAUC100N08S5N043ATMA1 by Infineon and IAUC60N06S5L073ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 βœ“ Active
Infineon
IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N08S5N043ATMA1 IAUC60N06S5L073ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.72 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Part Series IAUC / OptiMOS 5 β€”
Transistor Type N-Channel MOSFET (Enhancement Mode) N-Channel MOSFET
Maximum Drain-Source Voltage (V<sub>DS</sub>) 80 V β€”
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) 100 A (package limited) β€”
Continuous Drain Current (chip-limited) 120 A at T<sub>C</sub>=25Β°C, R<sub>thJC</sub>=1.2 K/W β€”
Maximum R<sub>DS(on)</sub> 4.3 mΞ© β€”
Maximum Power Dissipation (P<sub>D</sub>) 125 W (T<sub>C</sub>) β€”
Operating Temperature Range -55Β°C to +175Β°C -55C to +175C
Package PG-TDSON-8-34 (SuperSO8) PG-TDSON-8-33 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Moisture Sensitivity Level (MSL) MSL1 (up to 260Β°C peak reflow) β€”
Automotive Qualification AEC-Q101 β€”
Avalanche Rating 100% Avalanche Tested β€”
RoHS / REACH RoHS Compliant (Green Product) β€”
Technology OptiMOS 5 (Trench) Trench (OptiMOS 5)
Channel Mode Enhancement β€”
Series β€” OptiMOS 5
Drain-to-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Tj β€” 60 A
On-Resistance RDS(on) max β€” 7.3 mΞ©
Total Gate Charge (QG) β€” 17.4 nC
Power Dissipation (PD) at Tc β€” 52 W
Number of Pins β€” 8
Configuration β€” Single N-Channel
Qualification β€” AEC-Q101 automotive grade
RoHS Status β€” Compliant
MSL Level β€” [DATA_NEEDED: MSL level]
Gate Threshold Voltage VGS(th) typ β€” [DATA_NEEDED: VGS(th) typical]
Thermal Resistance RΞΈJA β€” [DATA_NEEDED: thermal resistance junction-to-ambient]

Datasheets & Resources

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