IAUC100N08S5N043ATMA1 vs IAUC60N06S5L073ATMA1 对比

详细并排对比 IAUC100N08S5N043ATMA1 出自 Infineon 和 IAUC60N06S5L073ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 ✓ 量产中
Infineon
IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 ✓ 量产中

规格对比

参数 IAUC100N08S5N043ATMA1 IAUC60N06S5L073ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.72 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Part Series IAUC / OptiMOS 5 —
晶体管类型 N-Channel MOSFET (Enhancement Mode) N-Channel MOSFET
Maximum Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 100 A (package limited) —
Continuous Drain Current (chip-limited) 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W —
Maximum R<sub>DS(on)</sub> 4.3 mΩ —
Maximum Power Dissipation (P<sub>D</sub>) 125 W (T<sub>C</sub>) —
工作温度范围 -55°C to +175°C -55C to +175C
封装 PG-TDSON-8-34 (SuperSO8) PG-TDSON-8-33 (5x6 mm)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
湿敏等级(MSL) MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 —
Avalanche Rating 100% Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Technology OptiMOS 5 (Trench) Trench (OptiMOS 5)
Channel Mode Enhancement —
Series — OptiMOS 5
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tj — 60 A
On-Resistance RDS(on) max — 7.3 mΩ
Total Gate Charge (QG) — 17.4 nC
Power Dissipation (PD) at Tc — 52 W
引脚数 — 8
Configuration — Single N-Channel
Qualification — AEC-Q101 automotive grade
RoHS 状态 — Compliant
MSL 等级 — [DATA_NEEDED: MSL level]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Thermal Resistance RθJA — [DATA_NEEDED: thermal resistance junction-to-ambient]

数据手册与资源

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