IAUC100N08S5N043ATMA1 vs IAUZ30N08S5N186ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N08S5N043ATMA1 by Infineon and IAUZ30N08S5N186ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 β ActiveInfineon
IAUZ30N08S5N186ATMA1
IAUZ30N08S5N186ATMA1 - 80V 18.6mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N08S5N043ATMA1 | IAUZ30N08S5N186ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.72 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Part Series | IAUC / OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET (Enhancement Mode) | β |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 100 A (package limited) | β |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25Β°C, R<sub>thJC</sub>=1.2 K/W | β |
| Maximum R<sub>DS(on)</sub> | 4.3 mΞ© | β |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55 Β°C to +175 Β°C (automotive) |
| Package | PG-TDSON-8-34 (SuperSO8) | PG-TSDSON-8-32 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Moisture Sensitivity Level (MSL) | MSL1 (up to 260Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS / REACH | RoHS Compliant (Green Product) | β |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 N-Channel Power MOSFET (trench) |
| Channel Mode | Enhancement | β |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tj) | β | 30 A |
| Power Dissipation (PD, Tc) | β | 41 W |
| On-State Resistance (RDS(on)) | β | 18.6 mΞ© (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg at VGS=10V] |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen-free status] |