IAUC100N08S5N043ATMA1 vs IAUZ30N08S5N186ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N08S5N043ATMA1 von Infineon und IAUZ30N08S5N186ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 ✓ AktivInfineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N08S5N043ATMA1 | IAUZ30N08S5N186ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,72 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Part Series | IAUC / OptiMOS 5 | — |
| Transistortyp | N-Channel MOSFET (Enhancement Mode) | — |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 100 A (package limited) | — |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W | — |
| Maximum R<sub>DS(on)</sub> | 4.3 mΩ | — |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) | — |
| Betriebstemperaturbereich | -55°C to +175°C | -55 °C to +175 °C (automotive) |
| Gehäuse | PG-TDSON-8-34 (SuperSO8) | PG-TSDSON-8-32 (5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | MSL1 (up to 260°C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 N-Channel Power MOSFET (trench) |
| Channel Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tj) | — | 30 A |
| Power Dissipation (PD, Tc) | — | 41 W |
| On-State Resistance (RDS(on)) | — | 18.6 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| RoHS-Status | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |