IAUC100N08S5N043ATMA1 vs IAUZ30N08S5N186ATMA1 Сравнение
Подробное сравнение бок о бок IAUC100N08S5N043ATMA1 от Infineon и IAUZ30N08S5N186ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 ✓ АктивенInfineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC100N08S5N043ATMA1 | IAUZ30N08S5N186ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,72 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Part Series | IAUC / OptiMOS 5 | — |
| Тип транзистора | N-Channel MOSFET (Enhancement Mode) | — |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 100 A (package limited) | — |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W | — |
| Maximum R<sub>DS(on)</sub> | 4.3 mΩ | — |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) | — |
| Диапазон рабочих температур | -55°C to +175°C | -55 °C to +175 °C (automotive) |
| Корпус | PG-TDSON-8-34 (SuperSO8) | PG-TSDSON-8-32 (5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Число выводов | 8 | — |
| Уровень чувствительности к влаге (MSL) | MSL1 (up to 260°C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 N-Channel Power MOSFET (trench) |
| Channel Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tj) | — | 30 A |
| Power Dissipation (PD, Tc) | — | 41 W |
| On-State Resistance (RDS(on)) | — | 18.6 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |
| Статус RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |