IAUC120N04S6N010ATMA1 vs IAUCN04S7L042GATMA1 比較
詳細並排比較 IAUC120N04S6N010ATMA1 由 Infineon 與 IAUCN04S7L042GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ 啟用中規格比較
| 參數 | IAUC120N04S6N010ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 40 V | — |
| Continuous Drain Current (Id, Tc) | 150 A | — |
| Power Dissipation (Pd, Tc) | 150 W | — |
| RDS(on) at VGS=10V (typ) | 1.0 mΩ | — |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΩ | — |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 µA) | — |
| Technology | OptiMOS 6 | Trench N-Channel MOSFET |
| 封裝 | PG-TDSON-8-34 (5x6 mm leadless) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| 安裝類型 | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Automotive Qualification | AEC-Q101 | — |
| 工作溫度範圍 | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) | -55C to +175C (Tj) |
| MSL 等級 | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | 1 |
| RoHS 狀態 | Compliant | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | — |
| Polarity | Single N-channel | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |