IAUC120N06S5L011ATMA1 vs IAUC120N04S6L012ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L011ATMA1 by Infineon and IAUC120N04S6L012ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 β ActiveInfineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5L011ATMA1 | IAUC120N04S6L012ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $1.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 60 V (S5 generation) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 60 V | β |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | β |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing | β |
| R_DS(on) max | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] | β |
| Power Dissipation (P_D) | 188 W at T_C = 25 Β°C | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-53 (TDSON-8 FL, 5 mm Γ 6 mm) | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (EAS) | β |
| Part Family | β | OptiMOS 6 40V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC | β | 120 A |
| Pulsed Drain Current (IDM) | β | 480 A |
| On-State Resistance (RDS(on)) at 10V VGS | β | 1.2 mΞ© (typ) |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg at 20V VGS] |
| Power Dissipation (PD) at TC | β | 115 W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (junction) |
| Delivery Form | β | Tape & Reel |