IAUC120N06S5L015ATMA1 vs IAUCN10S5L280DATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L015ATMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActiveInfineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUC120N06S5L015ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | N-Channel MOSFET (OptiMOS 5) | OptiMOS 5 Trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25C) | 235 A | — |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ | — |
| Gate Charge (Qg, typ) | 88 nC | — |
| Power Dissipation (PD, Tc=25C) | 167 W | — |
| Operating Temperature Range | -55C to +175C (Tj) | -55C to +175C (junction) |
| Package | PG-TDSON-8-43 (Surface Mount) | PG-TDSON-8-61 (SSO8) |
| Mounting Type | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | — |
| Typical Application | Automotive DC-DC, battery switches, motor drives | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Pin Count | — | 8 |
| Packing | — | Tape & Reel (T&R) |