IAUC60N04S6N044ATMA1 vs ISC0703NLSATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6N044ATMA1 by Infineon and ISC0703NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6N044ATMA1
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β Active
Specification Comparison
| Parameter | IAUC60N04S6N044ATMA1 | ISC0703NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.51 |
| Technology | OptiMOS-6 N-channel trench MOSFET | Trench MOSFET (OptiMOS family) |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | β |
| Continuous Drain Current (I_D) at Tc=25Β°C | 60 A | β |
| Continuous Drain Current (I_D) at Tc=100Β°C | [DATA_NEEDED: pulsed/current derated value] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΞ© | β |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | β |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | β |
| Power Dissipation (P_D) at Tc=25Β°C | 42 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Ta=25C | β | 13 A |
| Continuous Drain Current (ID) at Tc=25C | β | 57 A |
| Power Dissipation (PD) at Ta=25C | β | 3 W |
| Power Dissipation (PD) at Tc=25C | β | 44 W |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Standard Package Quantity | β | 5,000 (reel) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS rating] |