IAUC60N04S6N044ATMA1 vs ISC0703NLSATMA1 Comparação
Comparação detalhada lado a lado de IAUC60N04S6N044ATMA1 por Infineon e ISC0703NLSATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | IAUC60N04S6N044ATMA1 | ISC0703NLSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,98 | $0,51 |
| Technology | OptiMOS-6 N-channel trench MOSFET | Trench MOSFET (OptiMOS family) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| Temperatura de junção de operação | -55°C to +175°C | — |
| Encapsulamento | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8 (5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta=25C | — | 13 A |
| Continuous Drain Current (ID) at Tc=25C | — | 57 A |
| Power Dissipation (PD) at Ta=25C | — | 3 W |
| Power Dissipation (PD) at Tc=25C | — | 44 W |
| Faixa de temperatura de operação | — | -55C to +150C (junction) |
| Standard Package Quantity | — | 5,000 (reel) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS rating] |