IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
MPN: IAUC60N04S6N044ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.98 | $980.00 |
Drop-in alternatives for IAUC60N04S6N044ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IAUC60N04S6N044ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS-6 N-channel trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ |
| Power Dissipation (P_D) at Tc=25°C | 42 W |
| Operating Junction Temperature | -55°C to +175°C |
| Package | PG-TDSON-8 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited) |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) |
| RoHS Status | Compliant |
IAUC60N04S6N044ATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input (ESD-protected) |
| Pin 2 | SOURCE — Source connection (internally bonded to pins 2-7) |
| Pin 3 | SOURCE — Source connection |
| Pin 4 | SOURCE — Source connection |
| Pin 5 | SOURCE — Source connection |
| Pin 6 | SOURCE — Source connection |
| Pin 7 | SOURCE — Source connection |
| Pin 8 | SOURCE — Source connection (top thermal pad) |
| Pin EP | DRAIN — Drain connection via exposed bottom thermal pad |
Safe Operating Area (DC)
Typical Applications
IAUC60N04S6N044ATMA1 is suitable for 6 applications: Electric Power Steering (EPS), 12V/24V Automotive Body Control Module, Battery Management System (BMS) Protection, 48V Mild-Hybrid DC-DC Converter, Brake-by-Wire and Transmission Control, Industrial 24V Brushless DC Motor Drive.
Electric Power Steering (EPS)
The IAUC60N04S6N044ATMA1 is well-matched to electric power steering motor drives where high peak currents and continuous torque demand require a low-R<sub>DS(on)</sub> switching element. Its 4.4 mΩ on-resistance at V<sub>GS</sub>=10 V and 60 A continuous rating handle the 30-50 A peak currents typical of EPS assist motors without exceeding the 175 °C junction limit. Placed in the H-bridge high-side/low-side position, the part's AEC-Q101 automotive qualification and 42 W power dissipation rating meet OEM reliability targets. Unlike planar MOSFETs, the OptiMOS-6 trench structure reduces switching losses, improving PWM frequency headroom for smoother torque ripple control.
Recommended
12V/24V Automotive Body Control Module
Body control modules aggregate high-side switches for lighting, door locks, and seat controllers. The IAUC60N04S6N044ATMA1's 40 V V_DS rating tolerates 24 V truck/bus jump-start transients (clamped by the module's TVS), while its 4.4 mΩ R<sub>DS(on)</sub> keeps per-channel conduction loss under 2 W at 20 A load. Placed as the high-side switch driven by a BTS5008-1EJA smart high-side driver, the part provides robust inrush handling for incandescent bulb and motor loads. The exposed PG-TDSON-8 pad connects to module copper heatsinking, keeping junction temperature rise below 50 °C at full load.
Recommended
Battery Management System (BMS) Protection
In 12 V lithium-ion BMS packs, the IAUC60N04S6N044ATMA1 serves as the pack isolation MOSFET, carrying charge/discharge currents up to 60 A continuous. Its low 4.4 mΩ R<sub>DS(on)</sub> reduces parasitic loss across the contactor, improving round-trip efficiency and reducing heat dissipation in the battery pack enclosure. The 175 °C maximum junction temperature and AEC-Q101 qualification satisfy automotive safety standards (ISO 26262 ASIL-B capable systems). Placed in series with the battery stack, the part provides fast electronic isolation during fault conditions.
Recommended
48V Mild-Hybrid DC-DC Converter
The IAUC60N04S6N044ATMA1 is positioned as the primary-side switch in 48 V-to-12 V buck converters used in mild-hybrid vehicles. Its 40 V V_DS rating supports 48 V bus operation with adequate margin, and the OptiMOS-6 cell structure achieves low FOM (R<sub>DS(on)</sub> × Qg) for >100 kHz switching frequencies, shrinking magnetic components. The exposed thermal pad enables direct PCB heatsinking with thermal vias, managing the 42 W dissipation rating. AEC-Q101 qualification is mandatory for under-hood 48 V systems where ambient temperatures exceed 105 °C.
Recommended
Brake-by-Wire and Transmission Control
Safety-critical x-by-wire systems including brake-by-wire and electronic transmission control use the IAUC60N04S6N044ATMA1 in redundant H-bridge configurations driving small DC motors and solenoids. The part's automotive-grade qualification, hermetic-seal-compatible SS08 package, and 175 °C junction rating support under-hood operating environments. The 4.4 mΩ R<sub>DS(on)</sub> keeps conduction losses low during pulse-width-modulated actuator control, while the AEC-Q101 qualification ensures the long-term reliability required by ISO 26262 functional safety standards for ASIL-C and ASIL-D systems.
Recommended
Industrial 24V Brushless DC Motor Drive
Outside automotive, the IAUC60N04S6N044ATMA1 fits 24 V industrial BLDC motor drives in factory automation and robotics. Its 40 V V_DS rating tolerates 24 V bus transients with margin, and the 60 A continuous rating covers mid-power motor applications up to ~1.5 kW. The PG-TDSON-8 SS08 footprint allows compact three-phase inverter designs, with three MOSFETs per phase leg fitting on a small PCB. The exposed thermal pad simplifies thermal management through direct PCB copper heatsinking with thermal vias to inner planes.
Recommended
Recommended Products Summary
Engineering reference data for IAUC60N04S6N044ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC60N04S6N031HATMA1 | IAUC100N04S6L014ATMA1 | IAUC120N04S6L012ATMA1 | ISC0802NLSATMA1 | ISC0703NLSATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS max (V) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V | 80 V |
| R_DS(on) max @ V_GS=10V (mΩ) | 4.4 mΩ | 3.1 mΩ | 1.4 mΩ | 1.2 mΩ | 8.0 mΩ | 7.0 mΩ | 12.3 mΩ |
| Continuous I_D @ Tc=25°C (A) | 60 A | 60 A | 100 A | 120 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (W) | 42 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Grade | Yes (AEC-Q101, IAU prefix) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (industrial grade, ISC prefix) | Yes (industrial grade, ISC prefix) | Yes (AEC-Q101) |
| Technology Generation | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-3 |
Key Differentiators
- Lower R_DS(on) at higher current rating (vs IAUC60N04S6N031HATMA1)
- Lower current rating enables smaller package, lower cost (vs IAUC120N04S6L012ATMA1)
- Lower voltage rating vs higher-voltage alternatives (vs BSC123N08NS3GATMA1)
Design Notes
Estimated: at full 60 A continuous drain current with R_DS(on)=4.4 mΩ, conduction loss equals I² × R = 60² × 0.0044 ≈ 15.8 W. The PG-TDSON-8 package's exposed thermal pad should be soldered to a minimum 1 oz copper pour area of at least 25 mm x 25 mm (625 mm²) on the top layer, supplemented with a 3x3 array of 0.3 mm thermal vias to inner copper planes. Without this heatsinking, junction temperature rise can exceed 50 °C above ambient at full load, approaching the 175 °C T_j maximum. For continuous high-current applications, ensure ambient temperature stays below 105 °C under-hood.
Place the gate driver within 5 mm of the GATE pin (pin 1) to minimize gate-loop inductance. Use a 10 Ω gate resistor in series with the driver output to dampen ringing, and add a 100 kΩ pull-down resistor from GATE to SOURCE to keep the MOSFET off during controller reset. The SOURCE pins (2-7) should be stitched together on the top PCB layer with a wide trace or copper pour, and Kelvin-connected to the gate driver's ground reference to eliminate source-inductance-induced turn-on slowdown.
Do not drive the gate below 6 V — the OptiMOS-6 cell structure requires at least 10 V V_GS to achieve the datasheet 4.4 mΩ R_DS(on). Below 6 V the device operates in the linear region with dramatically higher losses and risk of thermal runaway. For battery-direct applications where the 12 V rail can drop to 6 V during cranking, add a gate-drive boost converter or charge pump to maintain full enhancement. Also ensure the SOURCE Kelvin connection is not shared with high-current power-path ground to avoid ground-bounce-induced false turn-on of the complementary MOSFET in H-bridge configurations.
Compliance Information
AEC-Q101 qualified (automotive discrete standard, equivalent to AEC-Q100 for discretes). RoHS and lead-free compliant per Infineon product page. Halogen-free status not explicitly stated in verified web data — [DATA_NEEDED].
