IAUC60N04S6N044ATMA1 vs ISC0703NLSATMA1 비교

다음의 상세 나란히 비교: IAUC60N04S6N044ATMA1 제조: Infineon 및 ISC0703NLSATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IAUC60N04S6N044ATMA1 ISC0703NLSATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.98 $0.51
Technology OptiMOS-6 N-channel trench MOSFET Trench MOSFET (OptiMOS family)
Drain-Source Voltage (V_DS) 40 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) at Tc=25°C 60 A —
Continuous Drain Current (I_D) at Tc=100°C [DATA_NEEDED: pulsed/current derated value] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max @ V_GS=10V 4.4 mΩ —
On-Resistance R_DS(on) max @ V_GS=4.5V [DATA_NEEDED: R_DS(on) at V_GS=4.5V] —
Total Gate Charge (Q_g) [DATA_NEEDED: typical gate charge] —
Power Dissipation (P_D) at Tc=25°C 42 W —
동작 접합 온도 -55°C to +175°C —
패키지 PG-TDSON-8 (5x6 mm) with exposed pad PG-TDSON-8 (5x6 mm)
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 (unlimited) [DATA_NEEDED: MSL level]
Automotive Qualification AEC-Q101 qualified (IAUC prefix) —
RoHS 상태 Compliant Compliant
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta=25C — 13 A
Continuous Drain Current (ID) at Tc=25C — 57 A
Power Dissipation (PD) at Ta=25C — 3 W
Power Dissipation (PD) at Tc=25C — 44 W
동작 온도 범위 — -55C to +150C (junction)
Standard Package Quantity — 5,000 (reel)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy (EAS) — [DATA_NEEDED: EAS rating]

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