IAUC60N10S5L110ATMA1 vs IPB024N10N5ATMA1 Comparison
Detailed side-by-side comparison of IAUC60N10S5L110ATMA1 by Infineon and IPB024N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N10S5L110ATMA1
IAUC60N10S5L110ATMA1 - 100V 11mΞ© N-Ch OptiMOS 5 | Infineon
IAUC60N10S5L110ATMA1 β ActiveInfineon
IPB024N10N5ATMA1 - 100V 2.4mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N10S5L110ATMA1 | IPB024N10N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $1.86 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’-5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | β |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | β |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | β |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | β |
| Package | PG-TDSON-8-33 (TDSON-8 Single) | PG-TO263-7 (D2PAK-7) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: min/max operating temperature] | -55C to +175C (junction) |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | β |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | β |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | β |
| Packing Code | ATMA1 (Tape & Reel) | β |
| MSL Level | 1 (per LCSC datasheet snippet) | 1 (unlimited floor life at <30C/85% RH) |
| Halogen-Free | Yes (per Infineon product classification) | Yes (per Infineon product family policy) |
| Customer Info / FGR | J52 (per Infineon product data) | β |
| Technology | β | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, TC=25C) | β | 180 A |
| Power Dissipation (PD, TC=25C) | β | 250 W |
| On-Resistance RDS(on) max @ VGS=10V | β | 2.4 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typ @ VGS=10V | β | [DATA_NEEDED: Qg total gate charge] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total gate charge] |
| Input Capacitance Ciss | β | [DATA_NEEDED: Ciss value] |
| Output Capacitance Coss | β | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | β | [DATA_NEEDED: Qrr value] |
| RoHS Status | β | Compliant |
| Packaging | β | Tape & Reel (13-inch reel) |