IAUC60N10S5L110ATMA1 vs IPB024N10N5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC60N10S5L110ATMA1 disebabkan oleh Infineon dan IPB024N10N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC60N10S5L110ATMA1 | IPB024N10N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™-5 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | — |
| Kemasan | PG-TDSON-8-33 (TDSON-8 Single) | PG-TO263-7 (D2PAK-7) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | [DATA_NEEDED: min/max operating temperature] | -55C to +175C (junction) |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | — |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | — |
| Packing Code | ATMA1 (Tape & Reel) | — |
| Aras MSL | 1 (per LCSC datasheet snippet) | 1 (unlimited floor life at <30C/85% RH) |
| Boson Bebas | Yes (per Infineon product classification) | Yes (per Infineon product family policy) |
| Customer Info / FGR | J52 (per Infineon product data) | — |
| Technology | — | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, TC=25C) | — | 180 A |
| Power Dissipation (PD, TC=25C) | — | 250 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.4 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: Qg total gate charge] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge] |
| Input Capacitance Ciss | — | [DATA_NEEDED: Ciss value] |
| Output Capacitance Coss | — | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Status RoHS | — | Compliant |
| Packaging | — | Tape & Reel (13-inch reel) |