IAUC90N10S5N062ATMA1 vs IAUC100N04S6L020ATMA1 Comparison

Detailed side-by-side comparison of IAUC90N10S5N062ATMA1 by Infineon and IAUC100N04S6L020ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 ✓ Active

Specification Comparison

Parameter IAUC90N10S5N062ATMA1 IAUC100N04S6L020ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc=25C 90 A —
Maximum On-Resistance RDS(on) max at VGS=10V 6.2 mOhm —
Gate-Source Threshold Voltage VGS(th) typ 3.8 V —
Maximum Power Dissipation (Tc=25C) 115 W —
Operating Junction Temperature -55 C to +175 C —
Package PG-TDSON-8-34 (TDSON-8) PG-TDSON-8 (SS08, 5x6 mm leadless)
Mounting Type Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 5, Generation 5) OptiMOS 6
Avalanche Rated Yes (100% avalanche tested) —
MSL (Moisture Sensitivity Level) MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
RoHS / Green Product Yes (RoHS compliant, Green Product) —
Lead-Free Yes —
FET Type — N-Channel
Drain-Source Breakdown Voltage V(BR)DSS — 40 V
Continuous Drain Current (Tc) — 100 A
Power Dissipation (Tc) — 75 W
RDS(on) Maximum @ VGS=10V, ID=50A — 2.04 mΩ
RDS(on) Typical — 2.0 mΩ
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) Typical — 2.0 V
Operating Temperature Range — -55 °C to +175 °C (TJ)
Qualification — Automotive grade
Packaging — Tape & Reel (TMA1)
RoHS Status — Compliant

Datasheets & Resources

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