IAUC90N10S5N062ATMA1 vs IAUC100N04S6L020ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC90N10S5N062ATMA1 disebabkan oleh Infineon dan IAUC100N04S6L020ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC90N10S5N062ATMA1 IAUC100N04S6L020ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc=25C 90 A —
Maximum On-Resistance RDS(on) max at VGS=10V 6.2 mOhm —
Gate-Source Threshold Voltage VGS(th) typ 3.8 V —
Maximum Power Dissipation (Tc=25C) 115 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-34 (TDSON-8) PG-TDSON-8 (SS08, 5x6 mm leadless)
Jenis Pemasangan Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 5, Generation 5) OptiMOS 6
Avalanche Rated Yes (100% avalanche tested) —
MSL (Moisture Sensitivity Level) MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
RoHS / Green Product Yes (RoHS compliant, Green Product) —
Lead-Free Yes —
FET Type — N-Channel
Drain-Source Breakdown Voltage V(BR)DSS — 40 V
Continuous Drain Current (Tc) — 100 A
Power Dissipation (Tc) — 75 W
RDS(on) Maximum @ VGS=10V, ID=50A — 2.04 mΩ
RDS(on) Typical — 2.0 mΩ
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) Typical — 2.0 V
Gambaran Suhu Operasi — -55 °C to +175 °C (TJ)
Qualification — Automotive grade
Packaging — Tape & Reel (TMA1)
Status RoHS — Compliant

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