IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
MPN: IAUC100N04S6L020ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.95 | $1.95 |
| 10 | $1.62 | $16.20 |
| 100 | $1.21 | $121.00 |
| 500 | $0.98 | $490.00 |
| 1,000 | $0.86 | $860.00 |
Drop-in alternatives for IAUC100N04S6L020ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC100N04S6L014ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.72 / Unit
View Datasheet →IAUC100N04S6L025ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IAUC120N04S6L012ATMA1
✅ Drop-In✓ In Stock
$1.21 / Unit
View Datasheet →IAUC60N04S6N044ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.98 / Unit
View Datasheet →BSZ070N08LS5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.78 / Unit
View Datasheet →IPD70R1K4P7SAUMA1
✅ Drop-In✓ In Stock
$0.52 / Unit
View Datasheet →IAUC100N04S6L020ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V |
| Continuous Drain Current (Tc) | 100 A |
| Power Dissipation (Tc) | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | 2.04 mΩ |
| RDS(on) Typical | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | 2.0 V |
| Technology | OptiMOS 6 |
| Operating Temperature Range | -55 °C to +175 °C (TJ) |
| Package | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| Mounting Type | Surface Mount |
| Qualification | Automotive grade |
| Packaging | Tape & Reel (TMA1) |
| RoHS Status | Compliant |
IAUC100N04S6L020ATMA1 Pin Configuration
| Pin 1 | Source — Power source connection (bonded to thermal pad internally on some variants) |
| Pin 2 | Source — Power source connection |
| Pin 3 | Source — Power source connection |
| Pin 4 | Kelvin Source — Kelvin-source connection for gate-drive return, reduces Ls effect on R<sub>DS(on)</sub> |
| Pin 5 | Gate — Gate input, drive with V<sub>GS</sub>=10 V for full enhancement |
| Pin 6 | Drain — Power drain connection |
| Pin 7 | Drain — Power drain connection |
| Pin 8 | Drain — Power drain connection, bonded to thermal pad on PCB top side |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IAUC100N04S6L020ATMA1 is suitable for 6 applications: Automotive ECU Power Switching, Electric Power Steering (EPS) and Braking Systems, High-Current DC-DC Synchronous Rectifier, Battery Management System (BMS) Protection Switch, BLDC Motor Drive Half-Bridge, USB-PD and eFuse Load Switch.
Automotive ECU Power Switching
The IAUC100N04S6L020ATMA1's 40 V V<sub>(BR)DSS</sub> and 100 A continuous drain current directly address 12 V and 24 V automotive ECU switching. Its OptiMOS 6 silicon delivers 2.04 mΩ max R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, keeping conduction losses under 20 W at full rated current - small enough to dissipate on the PG-TDSON-8's top-side thermal pad without a heatsink. The AEC-Q101 automotive qualification, -55 to +175 °C junction range and load-dump transient capability make it a robust high-side/low-side switch for body control modules and lighting ECUs, where it is typically driven by a TPS1H100-Q1 or BTS50080-1TEA gate driver from a 5 V logic-level PWM input.
Recommended
Electric Power Steering (EPS) and Braking Systems
In EPS and ABS/ESC power blocks the IAUC100N04S6L020ATMA1 forms the high-current half-bridge switches that drive the BLDC motor stator windings. Its 100 A continuous drain current handles peak transient currents seen during parking maneuvers, while the 2 mΩ R<sub>DS(on)</sub> minimizes I²R losses in the high-current path - critical for system efficiency and thermal budget. The PG-TDSON-8 footprint allows top-side cooling via the exposed pad, and the automotive qualification ensures compliance with ISO 26262 functional-safety analysis requirements.
Recommended
High-Current DC-DC Synchronous Rectifier
The IAUC100N04S6L020ATMA1 is an excellent synchronous rectifier for 12 V to 1 V/3.3 V buck converters in server, telecom and automotive point-of-load applications. Its 2.04 mΩ R<sub>DS(on)</sub> and low Q<sub>G</sub> of the OptiMOS 6 platform minimize both conduction and switching losses at 200 kHz - 1 MHz switching frequencies, achieving peak efficiencies above 95%. The PG-TDSON-8 package allows direct top-side cooling on a 100 mm² copper pour, and the 40 V V<sub>(BR)DSS</sub> provides adequate margin above 24 V input transients with proper snubbing.
Recommended
Battery Management System (BMS) Protection Switch
As a high-side disconnect switch in 12 V and 48 V mild-hybrid BMS systems, the IAUC100N04S6L020ATMA1's 100 A continuous rating and 2 mΩ R<sub>DS(on)</sub> minimize both voltage drop and heat generation during normal operation. The OptiMOS 6 cell provides robust avalanche energy (E<sub>AS</sub>) and short-circuit withstand, critical for handling inrush currents during pre-charge and load-dump transients. The PG-TDSON-8 footprint allows compact PCB layout alongside current-sense shunts, and the automotive qualification meets the reliability demands of battery-pack applications.
Recommended
BLDC Motor Drive Half-Bridge
For industrial and automotive BLDC motor drives (HVAC blowers, water pumps, e-bikes), the IAUC100N04S6L020ATMA1 serves as the low-side or high-side switch in a 3-phase inverter topology. Its 100 A continuous and 2 mΩ R<sub>DS(on)</sub> sustain PWM switching at 20-50 kHz while keeping the thermal envelope manageable on a standard 4-layer PCB. The PG-TDSON-8 footprint enables a compact 6-MOSFET inverter on a footprint under 25 mm x 25 mm, and pairing the part with IRS2008STRPBF or IR21271STRPBF gate drivers yields a robust, automotive-grade solution.
Recommended
USB-PD and eFuse Load Switch
In USB-PD 3.1 EPR (140 W) and high-current eFuse applications the IAUC100N04S6L020ATMA1 acts as the high-side protection switch in 12 V/24 V systems. Its 2.04 mΩ R<sub>DS(on)</sub> keeps conduction loss under 0.2 W at 10 A continuous load - small enough to avoid thermal shutdown without a heatsink - and the 40 V V<sub>(BR)DSS</sub> withstands load-dump transients on automotive 12 V rails. The device's fast switching speed, controlled by a BTS4141NHUMA1 or BTS70012-1ESP high-side driver, enables sub-millisecond overcurrent and reverse-current protection.
Recommended
Recommended Products Summary
Engineering reference data for IAUC100N04S6L020ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC100N04S6L014ATMA1 | IAUC100N04S6L025ATMA1 | IAUC120N04S6L012ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (Tc) | 100 A | 100 A | 100 A | 120 A | 60 A |
| RDS(on) max @ VGS=10V | 2.04 mΩ | 1.4 mΩ | 2.5 mΩ | 1.2 mΩ | 4.4 mΩ |
| Technology | OptiMOS 6 40V | OptiMOS 6 40V | OptiMOS 6 40V | OptiMOS 6 40V | OptiMOS 6 40V |
| Automotive Qualified | Yes | Yes | Yes | Yes | Yes |
| Power Dissipation (Tc) | 75 W | 75 W (similar) | 75 W (similar) | 100 W | 50 W |
| Price (qty-1, USD) | 1.95 | ~2.40 | ~1.65 | ~2.80 | ~1.10 |
Key Differentiators
- Lowest R_DS(on) at V_GS=10V in 5x6 mm SS08 package for 40 V class (vs IAUC100N04S6L025ATMA1)
- 100 A continuous drain current rating (vs IAUC60N04S6N044ATMA1)
- AEC-Q101 automotive qualification with OptiMOS 6 robustness (vs IAUC120N04S6L012ATMA1)
- Kelvin-source pin (pin 4) for cleaner gate drive (vs IPD70R1K4P7SAUMA1 (different voltage class))
Design Notes
Estimated: at I_D=100A and R_DS(on)=2.04 mΩ, conduction loss = I²R = 100² × 0.00204 = 20.4 W. The PG-TDSON-8 (SS08) package achieves a θ_JC of approximately 2.0 °C/W, so junction temperature rise above case = 20.4 × 2.0 = ~41 °C. Keep the case below 135 °C to maintain junction under 175 °C, which requires mounting on at least 100 mm² of top-side copper pour on a 1-oz 4-layer PCB.
Use the Kelvin-source pin (pin 4) as the gate-drive return path rather than bonding it to the power source. This eliminates source-inductance-induced R_DS(on) degradation during fast switching transitions (e.g., 50 V/ns). Place the gate driver within 5 mm of pins 4 and 5, and use a 10 Ω gate resistor to dampen ringing without slowing switching excessively.
Do not exceed V_GS=±20 V (even briefly) - the thin gate oxide of the OptiMOS 6 platform is not as robust as older OptiMOS generations. Use a gate-clamp TVS or a gate-driver with integrated V_GS clamping. Also, do not assume the source pins (1-3) and the thermal pad are internally bonded; the datasheet symbol shows them as separate for Kelvin-source flexibility - always check the specific variant's internal connection.
Keep the high-current loop (drain-source) area below 50 mm² to minimize parasitic inductance that can overshoot V_DS above 40 V during turn-off. Use 4-layer PCB with 2-oz top-side copper for the source/drain pads and a solid ground plane on layer 2 for return current. Place gate-loop components on the opposite side of the chip from the power loop.
Estimated: at 200 kHz switching with 100 A load, the dV/dt on the drain node can exceed 10 V/ns, radiating EMI in the 30-300 MHz band. Add a small RC snubber (e.g., 10 Ω + 1 nF) across drain-source if EMI fails CISPR 25 Class 5 testing in automotive applications.
Compliance Information
AEC-Q101 automotive qualified per Infineon OptiMOS 6 family specifications. RoHS and REACH compliant. Lead-free and halogen-free per the TMA1 suffix designation.
