IAUCN04S6N009TATMA1 vs IAUCN04S7N006ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S6N009TATMA1 by Infineon and IAUCN04S7N006ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN04S6N009TATMA1 IAUCN04S7N006ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Family OptiMOS 6 40 V —
Part Number IAUCN04S6N009T —
Ordering Code (MPN) IAUCN04S6N009TATMA1 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, at Tj) 330 A —
Power Dissipation (PD, at Tc) 178 W —
On-Resistance RDS(on) max 0.9 mΩ —
Package PG-LHDSO-10-2 (SSO10T) PG-TDSON-8-43
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 6 trench MOSFET OptiMOS 5 (trench)
Automotive Qualification AEC-Q101 AEC-Q101
Lead-Free / RoHS Yes / Compliant Yes (compliant)
Gate Threshold VGS(th) typ [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Qg typ [DATA_NEEDED: total gate charge] —
FET Type — N-Channel
Continuous Drain Current (ID) — 175 A
On-State Resistance (RDS(on)) — 0.63 mOhm (typ at VGS = 10 V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Operating Temperature Range — -55 C to +175 C
Junction Temperature Max — 175 C
Power Dissipation Max (Pd) — [DATA_NEEDED: Pd max]
Gate Charge Total (Qg) — [DATA_NEEDED: Qg total]
MSL Level — [DATA_NEEDED: MSL rating]

Datasheets & Resources

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