IAUCN04S7L006ATMA1 vs IAUC60N06S5L073ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L006ATMA1 by Infineon and IAUC60N06S5L073ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IAUCN04S7L006ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max | 0.6 mΩ at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Gate Charge (Q_g) | [DATA_NEEDED: total gate charge] | — |
| Operating Temperature Range | -55 °C to +175 °C | -55C to +175C |
| Package | PG-TDSON-8-43 | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS-7 trench | Trench (OptiMOS 5) |
| Automotive Qualified | Yes (AEC-Q101) | — |
| RoHS Status | Compliant | Compliant |
| Pin Count | 8 | — |
| Packaging | Tape and Reel (ATMA1) | — |
| Polarity | Single N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Power Dissipation (PD) at Tc | — | 52 W |
| Number of Pins | — | 8 |
| Configuration | — | Single N-Channel |
| Qualification | — | AEC-Q101 automotive grade |
| MSL Level | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |