IAUCN04S7L006ATMA1 vs IAUC60N06S5L073ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7L006ATMA1 dari Infineon dan IAUC60N06S5L073ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN04S7L006ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max | 0.6 mΩ at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Gate Charge (Q_g) | [DATA_NEEDED: total gate charge] | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | -55C to +175C |
| Paket | PG-TDSON-8-43 | PG-TDSON-8-33 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS-7 trench | Trench (OptiMOS 5) |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Status RoHS | Compliant | Compliant |
| Jumlah Pin | 8 | — |
| Packaging | Tape and Reel (ATMA1) | — |
| Polarity | Single N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Power Dissipation (PD) at Tc | — | 52 W |
| Jumlah Pin | — | 8 |
| Configuration | — | Single N-Channel |
| Qualification | — | AEC-Q101 automotive grade |
| Level MSL | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |