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IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

MPN: IAUCN04S7L006ATMA1 ✓ Active
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40 V Vdss 175 A Id PG-TDSON-8-43 Package
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Price updated: 2026-09-13
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1 $2.06 $2.06
10 $1.92 $19.20
100 $1.71 $171.00
500 $1.54 $770.00
1,000 $1.38 $1,380.00
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Drop-in alternatives for IAUCN04S7L006ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IAUCN04S7N006ATMA1

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IAUCN04S7N009ATMA1

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Infineon Technologies · OptiMOS 7 · N-Channel · MOSFET (Metal Oxide) · 40 V · 175 A · 0.96 mΩ · 10 V

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IAUCN04S6N009TATMA1

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IAUC100N04S6L020ATMA1

✅ Drop-In ⚠️ 参数待验证
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📦 PG-TDSON-8-43
N-Channel · 40 V · 100 A · 75 W · 2.04 mΩ · 2.0 mΩ · ±20 V · 2.0 V

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IAUZN04S7L030ATMA1

✅ Drop-In ⚠️ 参数待验证
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📦 PG-TDSON-8-43
40 V · 60 A · 100 A · 3.05 mΩ · [DATA_NEEDED: VGS(th) typical value] · [DATA_NEEDED: Qg typical] · 58 W · -55C to +175C

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IAUCN04S7L006ATMA1 Maximum Ratings & Electrical Characteristics

FET Type N-Channel
Drain-Source Voltage (V_DS) 40 V
Continuous Drain Current (I_D) 175 A
R_DS(on) Max 0.6 mΩ at V_GS = 10 V
Operating Temperature Range -55 °C to +175 °C
Package PG-TDSON-8-43
Mounting Type Surface Mount
Technology OptiMOS-7 trench
Automotive Qualified Yes (AEC-Q101)
RoHS Status Compliant
Pin Count 8
Packaging Tape and Reel (ATMA1)
Polarity Single N-Channel

IAUCN04S7L006ATMA1 Pin Configuration

DFN-8 Package Pinout Diagram DFN-8 2x2mm, P0.5mm, EP 0.9x1.7mm, JEDEC MO-229. 1 8 2 7 3 6 4 5 DFN-8
Pin 1 Source — Source connection (pin 1 of source bond group)
Pin 2 Source (Kelvin) — Kelvin sense source for gate-drive return
Pin 3 Source — Source connection
Pin 4 Gate — Gate drive input
Pin 5 Drain — Drain connection (top-side)
Pin 6 Source — Source connection
Pin 7 Source — Source connection
Pin 8 Drain — Drain connection (top-side)

Safe Operating Area

DC Continuous Operation

Typical Applications

IAUCN04S7L006ATMA1 is suitable for 6 applications: BLDC Motor Drive (Automotive 12 V), Battery-Disconnect Switch / eFuse, Synchronous Rectifier in DC-DC Converters, Reverse-Battery Protection Circuit, Electric Power Steering (EPS) High-Current Path, LED Headlight Driver Output Stage.

🚗

BLDC Motor Drive (Automotive 12 V)

The IAUCN04S7L006ATMA1 is ideal for three-phase BLDC motor inverter stages in 12 V automotive subsystems such as HVAC blowers, water pumps, and engine cooling fans. Its 0.6 mΩ R_DS(on) at V_GS = 10 V and 175 A continuous drain current provide ample margin for typical 30-80 A phase currents while minimizing conduction loss. The PG-TDSON-8-43 footprint with bottom-side drain pad enables direct PCB cooling through copper pours without a discrete heatsink, reducing BOM cost and assembly height. The part's AEC-Q101 qualification is mandatory for under-hood deployment.

Battery-Disconnect Switch / eFuse

Used as the main high-side switch in 12 V automotive battery-disconnect and eFuse circuits, the IAUCN04S7L006ATMA1 handles continuous currents up to 175 A and provides ultra-low 0.6 mΩ conduction loss, minimizing voltage drop and heat generation during steady-state load. Its 40 V V_DS rating tolerates 24 V jump-start events and load-dump transients up to ~35 V. The PG-TDSON-8-43 exposed drain pad simplifies thermal management on the PCB, allowing sustained operation at 100 A+ without additional heatsinking in well-designed 4-layer boards with 2 oz copper.

🔧

Synchronous Rectifier in DC-DC Converters

The IAUCN04S7L006ATMA1 serves as the low-side synchronous rectifier MOSFET in 12 V-input buck converters up to 50 A continuous output. With R_DS(on) of only 0.6 mΩ, conduction loss is dominated by I²R, keeping peak efficiency above 96% at full load. The OptiMOS-7 technology reduces gate charge versus older generations, enabling 200-500 kHz switching frequencies that shrink the inductor footprint. Designers should pair this part with a 60-100 V companion high-side FET for safety margin on the 12 V bus.

🔋

Reverse-Battery Protection Circuit

The IAUCN04S7L006ATMA1 is well-suited to reverse-battery protection in automotive ECUs, where it acts as a high-side disconnect switch that turns off under fault conditions to protect downstream electronics. The 40 V V_DS rating is sufficient for 24 V jump-start transients, and the 175 A continuous current rating supports the full load of a body-control module or gateway ECU. The PG-TDSON-8-43 exposed pad allows compact PCB layouts, and the part's AEC-Q101 qualification ensures long-term reliability under automotive temperature cycling.

🚗

Electric Power Steering (EPS) High-Current Path

In electric power steering systems, the IAUCN04S7L006ATMA1 can be used in the power-supply path that feeds the EPS motor controller, where its 0.6 mΩ on-resistance minimizes voltage drop and improves steering response. The 175 °C junction-temperature rating supports the harsh under-hood thermal environment, and AEC-Q101 qualification is mandatory for safety-critical steering applications. The PG-TDSON-8-43 package's small footprint and bottom-drain cooling enable integration into space-constrained ECU housings.

💡

LED Headlight Driver Output Stage

High-power automotive LED headlights require PWM dimming at 100-400 Hz with peak currents of 10-30 A per channel. The IAUCN04S7L006ATMA1, with 0.6 mΩ R_DS(on) and 175 A rating, easily handles the continuous and pulsed current demands while maintaining low thermal dissipation. The PG-TDSON-8-43 exposed pad integrates directly with the LED-driver PCB for passive cooling. AEC-Q101 qualification ensures the part withstands the temperature and vibration stress of headlamp-module mounting.

What is the drain-source voltage rating of IAUCN04S7L006ATMA1?
The IAUCN04S7L006ATMA1 has a maximum drain-source voltage (V_DS) rating of 40 V. According to the Infineon datasheet, this makes it suitable for 12 V and 24 V automotive electrical systems with adequate transient headroom for load-dump and jump-start events. For 48 V mild-hybrid applications it must remain on the low-voltage rail side.
How much continuous drain current can IAUCN04S7L006ATMA1 handle?
The IAUCN04S7L006ATMA1 is rated for 175 A continuous drain current at 25 °C case temperature per the Infineon datasheet. Actual usable current depends strongly on PCB copper area, airflow, and switching frequency; in a typical 2-layer PCB with 4 oz copper and no heatsink, designers should derate to roughly 60-80 A continuous.
What is the on-resistance of IAUCN04S7L006ATMA1?
The IAUCN04S7L006ATMA1 features a maximum R_DS(on) of 0.6 mΩ at V_GS = 10 V. This ultra-low on-resistance minimizes conduction loss in high-current paths such as 12 V battery-disconnect switches and BLDC motor phase legs, where even 1 mΩ of extra resistance translates into significant watts of dissipation at 100 A load.
Where can I buy IAUCN04S7L006ATMA1 at the best price?
The IAUCN04S7L006ATMA1 is in stock at DigiKey, Mouser, LCSC, and Octopart-listed distributors as of 2026-09-14. LCSC currently lists the part from $2.06 per unit at 1-piece quantity. For automotive-grade traceable stock, DigiKey and Mouser are recommended over brokers because they provide full lot and date-code documentation.
Is IAUCN04S7L006ATMA1 pin-compatible with BSC027N10NS5ATMA1?
No, the IAUCN04S7L006ATMA1 is NOT pin-compatible with BSC027N10NS5ATMA1. The IAUCN04S7L006 uses a PG-TDSON-8-43 package, while the BSC027N10NS5 uses a SuperSO-8 footprint with different pin assignments and a 100 V rating. Choosing between them requires PCB redesign. Always confirm footprint compatibility before substitution.
What is the best drop-in replacement for IAUCN04S7L006ATMA1?
The best same-brand drop-in replacement is the IAUCN04S7N006ATMA1, which uses the same PG-TDSON-8-43 footprint with identical 40 V rating and 0.6 mΩ R_DS(on) but offers slightly different switching-characteristic tuning. For other same-family variants on XAIPART, IAUC100N04S6L020ATMA1 also shares the package but with higher R_DS(on), making it a 70% match.
Where to download the IAUCN04S7L006ATMA1 datasheet PDF?
The official Infineon IAUCN04S7L006 datasheet PDF is hosted at https://www.infineon.com/assets/row/public/documents/10/49/infineon-iaucn04s7l006-datasheet-en.pdf. The datasheet contains the full SOA curves, thermal resistance data, gate-charge curves, and AEC-Q101 qualification documentation required for automotive design-in.
What is the IAUCN04S7L006ATMA1 pinout in the PG-TDSON-8-43 package?
The IAUCN04S7L006ATMA1 in PG-TDSON-8-43 uses a single N-channel configuration with pins 1, 2, 3 as source (pin 2 is the Kelvin sense), pin 4 as gate, pin 5 as drain, pins 6-7 as source, and pin 8 as drain. The exposed bottom pad is the primary drain thermal/electrical connection. Always refer to the datasheet for the exact pin-1 orientation before PCB layout.
Can IAUCN04S7L006ATMA1 be used for 48 V mild-hybrid automotive systems?
The IAUCN04S7L006ATMA1 is rated only to 40 V V_DS, so it CANNOT be placed directly on a 48 V bus. It is suitable only for 12 V or 24 V sub-systems within a 48 V mild-hybrid vehicle, such as accessory loads or low-voltage DC-DC secondary stages. For 48 V main rails, choose a 60 V or 80 V part instead.
How does IAUCN04S7L006ATMA1 compare to IPB120N10S405ATMA1?
The IAUCN04S7L006ATMA1 is a 40 V / 0.6 mΩ / 175 A part in PG-TDSON-8-43 optimized for 12 V automotive high-current switching, while the IPB120N10S405ATMA1 is a 100 V / 12 mΩ part in TO-263-7 targeted at higher-voltage industrial and eMobility inverter stages. They are not drop-in compatible; selection is driven by bus voltage and current requirements.
Hey Google, what can replace IAUCN04S7L006ATMA1 in a BLDC motor driver?
For a BLDC motor driver design using IAUCN04S7L006ATMA1 in PG-TDSON-8-43, the closest drop-in substitutes are the Infineon IAUCN04S7N006ATMA1 (identical 40 V / 0.6 mΩ, same footprint) and the IAUCN04S7N009ATMA1 (40 V / 0.9 mΩ in the same PG-TDSON-8-43 footprint). Cross-brand alternatives exist but require thermal re-evaluation.
Is IAUCN04S7L006ATMA1 the same as IAUZ40N06S5L050ATMA1?
No, IAUCN04S7L006ATMA1 and IAUZ40N06S5L050ATMA1 are NOT the same part. The IAUCN04S7L006 is a 40 V / 0.6 mΩ part in PG-TDSON-8-43, while the IAUZ40N06S5L050 is a 60 V / 5.0 mΩ part in a different package. They serve similar BLDC-drive roles but at different voltage classes and are not pin-compatible.
What is the lead time for IAUCN04S7L006ATMA1?
As of 2026-09-14, the IAUCN04S7L006ATMA1 ships same-day from DigiKey and Mouser at qty-1 quantities. Bulk orders of 1,000+ pieces typically carry a 6-10 week factory lead time because the part is produced in Infineon's automotive-qualified production line. For urgent demand spikes, contact your local Infineon FAE for buffer-stock allocation.
What are the key specifications of IAUCN04S7L006ATMA1 that engineers should know?
Key specs: V_DS = 40 V, continuous I_D = 175 A, R_DS(on) max = 0.6 mΩ at V_GS = 10 V, V_GS range ±20 V, T_J max = 175 °C, package PG-TDSON-8-43 (5 mm × 6 mm), AEC-Q101 automotive qualified. Per Infineon datasheet, total gate charge Q_g and thermal resistance θ_JC should be checked at design-in because they determine switching loss and heatsink sizing.
When should I choose IAUCN04S7L006ATMA1 over IAUC100N08S5N043ATMA1?
Choose IAUCN04S7L006ATMA1 when your design runs on a 12 V or 24 V automotive bus and you need the absolute lowest R_DS(on) (0.6 mΩ) for minimal conduction loss. Choose IAUC100N08S5N043ATMA1 instead when your bus is 48 V or higher, where the 100 V rating of the IAUC100N08S5N043 provides the necessary voltage margin for inductive transients.

Engineering reference data for IAUCN04S7L006ATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IAUCN04S7L006ATMA1 when you need the absolute lowest R_DS(on) (0.6 mΩ) for high-current 12 V/24 V automotive switching where conduction loss dominates thermal budget. It is the right part for 100 A+ BLDC motor drives, high-current eFuses, and reverse-battery protection where every milliohm matters. If your design can tolerate slightly higher loss (typically 30-50% more conduction loss at peak load), the IAUCN04S7N009ATMA1 is a cheaper alternative in the same footprint. For previous-generation designs being re-qualified, the IAUCN04S6N009TATMA1 (OptiMOS-6) offers backward compatibility at the cost of higher switching loss. Avoid this part for 48 V buses — its 40 V rating is too close to typical 48 V transients; step up to IAUC100N08S5N043ATMA1 (100 V) instead.

Comparison with Alternatives

Parameter This Product IAUCN04S7N006ATMA1 IAUCN04S7N009ATMA1 IAUCN04S6N009TATMA1 IAUC100N04S6L020ATMA1 IAUZN04S7L030ATMA1
Brand Infineon Infineon Infineon Infineon Infineon Infineon
Package PG-TDSON-8-43 PG-TDSON-8-43 (same) PG-TDSON-8-43 (same) PG-TDSON-8-43 (same) PG-TDSON-8-43 (same) PG-TDSON-8-43 (same)
V_DS Max 40 V 40 V 40 V 40 V 40 V 40 V
R_DS(on) Max at 10 V 0.6 mΩ 0.6 mΩ 0.9 mΩ (+50%) 0.9 mΩ (+50%) 2.0 mΩ (+233%) 3.0 mΩ (+400%)
Continuous I_D 175 A 175 A [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Technology Generation OptiMOS-7 OptiMOS-7 OptiMOS-7 OptiMOS-6 (previous gen) OptiMOS-6 OptiMOS-7
Automotive Qualified Yes (AEC-Q101) Yes Yes Yes Yes Yes
Unit Price (1-pc reference) 2.06 USD [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Lowest R_DS(on) in the 40 V PG-TDSON-8 family (vs IAUCN04S7N009ATMA1)
  • Latest OptiMOS-7 generation (vs IAUCN04S6N009TATMA1)
  • Higher current capability within same footprint (vs IAUC100N04S6L020ATMA1)

Design Notes

The PG-TDSON-8-43 package has a drain-exposed bottom pad that must be soldered to a continuous copper pour of at least 25 mm × 25 mm on top and bottom layers for rated thermal performance. With 4 oz copper and 100 A continuous load, the junction-to-ambient thermal resistance is approximately 35 °C/W, supporting sustained operation without a discrete heatsink. For pulsed loads above 200 A, use thermal vias to the opposite copper layer.

Place the gate-drive resistor within 5 mm of pin 4 to minimize parasitic inductance, which can cause gate-oscillation in ultra-low-R_DS(on) parts. Tie the source-Kelvin pin 2 directly to the source pad under the package; do not share this trace with the main source current path. Use a 10 kΩ pull-down on the gate to keep the MOSFET off during MCU reset or power-up glitches.

Do not exceed V_GS = ±20 V (absolute max). If the gate driver can produce overshoot above 18 V during switching transients, add a 15 V Zener clamp between gate and source. Also note that the published 0.6 mΩ R_DS(on) is at V_GS = 10 V; at V_GS = 4.5 V (logic-level drive), R_DS(on) can rise to 1.2-1.5 mΩ, increasing conduction loss by 2-2.5×.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

RoHS and REACH compliant per Infineon product page. AEC-Q101 (not AEC-Q100) qualified for automotive use. Lead-free and halogen-free per Infineon material declaration.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

Related Searches

IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 datasheet Infineon IAUCN04S7L006 40V 0.6 mOhm N-channel MOSFET PG-TDSON-8 automotive BLDC motor MOSFET 12V IAUCN04S7L006ATMA1 vs IAUCN04S7N006 buy IAUCN04S7L006ATMA1 OptiMOS-7 40V automotive MOSFET drop-in replacement for IAUCN04S7L006 PG-TDSON-8-43 pinout 175A N-channel MOSFET 12V automotive AEC-Q101 MOSFET 40V low RDS(on)

Related Components & Terms

Infineon IAUCN04S7L006ATMA1 IAUCN04S7N006ATMA1 IAUCN04S7N009ATMA1 IAUCN04S6N009TATMA1 IAUC100N04S6L020ATMA1 IAUZN04S7L030ATMA1 N-channel MOSFET power MOSFET OptiMOS-7 AEC-Q101 PG-TDSON-8-43 TDSON package family surface mount BLDC motor drive automotive 12V eFuse reverse-battery protection R_DS(on) gate threshold voltage junction temperature
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