IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon
MPN: IAUCN04S7L006ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.06 | $2.06 |
| 10 | $1.92 | $19.20 |
| 100 | $1.71 | $171.00 |
| 500 | $1.54 | $770.00 |
| 1,000 | $1.38 | $1,380.00 |
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View Datasheet →IAUCN04S7L006ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) | 175 A |
| R_DS(on) Max | 0.6 mΩ at V_GS = 10 V |
| Operating Temperature Range | -55 °C to +175 °C |
| Package | PG-TDSON-8-43 |
| Mounting Type | Surface Mount |
| Technology | OptiMOS-7 trench |
| Automotive Qualified | Yes (AEC-Q101) |
| RoHS Status | Compliant |
| Pin Count | 8 |
| Packaging | Tape and Reel (ATMA1) |
| Polarity | Single N-Channel |
IAUCN04S7L006ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (pin 1 of source bond group) |
| Pin 2 | Source (Kelvin) — Kelvin sense source for gate-drive return |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain connection (top-side) |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Drain — Drain connection (top-side) |
Safe Operating Area
Typical Applications
IAUCN04S7L006ATMA1 is suitable for 6 applications: BLDC Motor Drive (Automotive 12 V), Battery-Disconnect Switch / eFuse, Synchronous Rectifier in DC-DC Converters, Reverse-Battery Protection Circuit, Electric Power Steering (EPS) High-Current Path, LED Headlight Driver Output Stage.
BLDC Motor Drive (Automotive 12 V)
The IAUCN04S7L006ATMA1 is ideal for three-phase BLDC motor inverter stages in 12 V automotive subsystems such as HVAC blowers, water pumps, and engine cooling fans. Its 0.6 mΩ R_DS(on) at V_GS = 10 V and 175 A continuous drain current provide ample margin for typical 30-80 A phase currents while minimizing conduction loss. The PG-TDSON-8-43 footprint with bottom-side drain pad enables direct PCB cooling through copper pours without a discrete heatsink, reducing BOM cost and assembly height. The part's AEC-Q101 qualification is mandatory for under-hood deployment.
Recommended
Battery-Disconnect Switch / eFuse
Used as the main high-side switch in 12 V automotive battery-disconnect and eFuse circuits, the IAUCN04S7L006ATMA1 handles continuous currents up to 175 A and provides ultra-low 0.6 mΩ conduction loss, minimizing voltage drop and heat generation during steady-state load. Its 40 V V_DS rating tolerates 24 V jump-start events and load-dump transients up to ~35 V. The PG-TDSON-8-43 exposed drain pad simplifies thermal management on the PCB, allowing sustained operation at 100 A+ without additional heatsinking in well-designed 4-layer boards with 2 oz copper.
Recommended
Synchronous Rectifier in DC-DC Converters
The IAUCN04S7L006ATMA1 serves as the low-side synchronous rectifier MOSFET in 12 V-input buck converters up to 50 A continuous output. With R_DS(on) of only 0.6 mΩ, conduction loss is dominated by I²R, keeping peak efficiency above 96% at full load. The OptiMOS-7 technology reduces gate charge versus older generations, enabling 200-500 kHz switching frequencies that shrink the inductor footprint. Designers should pair this part with a 60-100 V companion high-side FET for safety margin on the 12 V bus.
Recommended
Reverse-Battery Protection Circuit
The IAUCN04S7L006ATMA1 is well-suited to reverse-battery protection in automotive ECUs, where it acts as a high-side disconnect switch that turns off under fault conditions to protect downstream electronics. The 40 V V_DS rating is sufficient for 24 V jump-start transients, and the 175 A continuous current rating supports the full load of a body-control module or gateway ECU. The PG-TDSON-8-43 exposed pad allows compact PCB layouts, and the part's AEC-Q101 qualification ensures long-term reliability under automotive temperature cycling.
Recommended
Electric Power Steering (EPS) High-Current Path
In electric power steering systems, the IAUCN04S7L006ATMA1 can be used in the power-supply path that feeds the EPS motor controller, where its 0.6 mΩ on-resistance minimizes voltage drop and improves steering response. The 175 °C junction-temperature rating supports the harsh under-hood thermal environment, and AEC-Q101 qualification is mandatory for safety-critical steering applications. The PG-TDSON-8-43 package's small footprint and bottom-drain cooling enable integration into space-constrained ECU housings.
Recommended
LED Headlight Driver Output Stage
High-power automotive LED headlights require PWM dimming at 100-400 Hz with peak currents of 10-30 A per channel. The IAUCN04S7L006ATMA1, with 0.6 mΩ R_DS(on) and 175 A rating, easily handles the continuous and pulsed current demands while maintaining low thermal dissipation. The PG-TDSON-8-43 exposed pad integrates directly with the LED-driver PCB for passive cooling. AEC-Q101 qualification ensures the part withstands the temperature and vibration stress of headlamp-module mounting.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7L006ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N006ATMA1 | IAUCN04S7N009ATMA1 | IAUCN04S6N009TATMA1 | IAUC100N04S6L020ATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-43 | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) |
| V_DS Max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| R_DS(on) Max at 10 V | 0.6 mΩ | 0.6 mΩ | 0.9 mΩ (+50%) | 0.9 mΩ (+50%) | 2.0 mΩ (+233%) | 3.0 mΩ (+400%) |
| Continuous I_D | 175 A | 175 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Generation | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-6 (previous gen) | OptiMOS-6 | OptiMOS-7 |
| Automotive Qualified | Yes (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
| Unit Price (1-pc reference) | 2.06 USD | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest R_DS(on) in the 40 V PG-TDSON-8 family (vs IAUCN04S7N009ATMA1)
- Latest OptiMOS-7 generation (vs IAUCN04S6N009TATMA1)
- Higher current capability within same footprint (vs IAUC100N04S6L020ATMA1)
Design Notes
The PG-TDSON-8-43 package has a drain-exposed bottom pad that must be soldered to a continuous copper pour of at least 25 mm × 25 mm on top and bottom layers for rated thermal performance. With 4 oz copper and 100 A continuous load, the junction-to-ambient thermal resistance is approximately 35 °C/W, supporting sustained operation without a discrete heatsink. For pulsed loads above 200 A, use thermal vias to the opposite copper layer.
Place the gate-drive resistor within 5 mm of pin 4 to minimize parasitic inductance, which can cause gate-oscillation in ultra-low-R_DS(on) parts. Tie the source-Kelvin pin 2 directly to the source pad under the package; do not share this trace with the main source current path. Use a 10 kΩ pull-down on the gate to keep the MOSFET off during MCU reset or power-up glitches.
Do not exceed V_GS = ±20 V (absolute max). If the gate driver can produce overshoot above 18 V during switching transients, add a 15 V Zener clamp between gate and source. Also note that the published 0.6 mΩ R_DS(on) is at V_GS = 10 V; at V_GS = 4.5 V (logic-level drive), R_DS(on) can rise to 1.2-1.5 mΩ, increasing conduction loss by 2-2.5×.
Compliance Information
RoHS and REACH compliant per Infineon product page. AEC-Q101 (not AEC-Q100) qualified for automotive use. Lead-free and halogen-free per Infineon material declaration.