IAUCN04S7N009ATMA1 vs IAUZN04S7L030ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N009ATMA1 by Infineon and IAUZN04S7L030ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IAUCN04S7N009ATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-TSDSON-8-44 (S3O8) 3x3 mm² |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | — |
| Configuration | Single N-Channel | — |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 60 A |
| Pulsed Drain Current (IDM, Tj) | — | 100 A |
| On-State Resistance (RDS(on), VGS=10V max) | — | 3.05 mΩ |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD, Tc=25°C) | — | 58 W |
| Operating Junction Temperature (Tj) | — | -55C to +175C |
| Technology Family | — | OptiMOS-7 |
| Channel Type | — | N-Channel |
| Automotive Qualification | — | AEC-Q101 (Automotive OptiMOS) |
| RoHS Compliance | — | Compliant |