IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon
MPN: IAUZN04S7L030ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.82 | $0.82 |
| 10 | $0.74 | $7.40 |
| 100 | $0.62 | $62.00 |
| 500 | $0.51 | $255.00 |
| 1,000 | $0.43 | $430.00 |
| 5,000 | $0.36 | $1,800.00 |
Drop-in alternatives for IAUZN04S7L030ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IAUZN04S7L030ATMA1 Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 60 A |
| Pulsed Drain Current (IDM, Tj) | 100 A |
| On-State Resistance (RDS(on), VGS=10V max) | 3.05 mΩ |
| Power Dissipation (PD, Tc=25°C) | 58 W |
| Operating Junction Temperature (Tj) | -55C to +175C |
| Technology Family | OptiMOS-7 |
| Channel Type | N-Channel |
| Package | PG-TSDSON-8-44 (S3O8) 3x3 mm² |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 (Automotive OptiMOS) |
| RoHS Compliance | Compliant |
IAUZN04S7L030ATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Source / NC — Source or no-connect (per datasheet) |
| Pin 5 | Drain (Exposed Pad) — Drain connection and thermal pad on underside |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
IAUZN04S7L030ATMA1 is suitable for 6 applications: Automotive 12V Board-Net Switching, USB-PD Power-Path Switch, Synchronous Rectification in DC-DC Converters, E-Fuse and Hot-Swap Controller, H-Bridge Motor Drive, Battery Management System (BMS) Protection.
Automotive 12V Board-Net Switching
The IAUZN04S7L030ATMA1 is purpose-built for 12V automotive board-net power switching in ECUs, body controllers, and gateway modules. Its 40 V VDS rating provides reliable margin against 18V clamped load-dump transients, while the 3.05 mΩ RDS(on) at VGS=10V keeps conduction loss below 200 mW per MOSFET at 10A continuous load. In a typical high-side switch topology (12V battery → MOSFET drain → load → GND), this part replaces older 5 mΩ / 8 mΩ MOSFETs and immediately improves thermal headroom. The AEC-Q101 qualification makes it acceptable for safety-relevant modules including BCM, PEPS, and ADAS sensor power rails. Use it with a 10kΩ gate-source resistor to prevent false turn-on during load-dump, and a TVS diode (e.g., SMBJ24A) on the drain for additional transient protection.
Recommended
USB-PD Power-Path Switch
For USB-PD/EPR charging ports up to 100W, the IAUZN04S7L030ATMA1 serves as the synchronous rectifier MOSFET on the low-side or as a high-side isolation switch. At 5A continuous (100W @ 20V), its 3.05 mΩ RDS(on) dissipates roughly 76 mW - small enough to eliminate the heatsink in compact Type-A3 and Type-C connector designs. The 40 V rating covers USB-PD's 28V nominal EPR range with comfortable margin, while OptiMOS-7's low Qg (~5-10 nC class) keeps switching losses minimal at 150-300 kHz buck frequencies typical of USB-PD controllers. The exposed-drain S3O8 pad pulls heat directly into PCB copper, allowing 6-8W continuous dissipation with 1 sq-in of 2 oz copper pour. Pair with a USB-PD controller such as the IFX9201SGAUMA1 or PXE1110CDMG003XTMA1 for a complete 100W charging port.
Recommended
Synchronous Rectification in DC-DC Converters
In 12V-to-1V/3.3V/5V buck converters, the IAUZN04S7L030ATMA1 functions as the low-side synchronous rectifier MOSFET with excellent efficiency at 100 kHz - 1 MHz switching frequencies. OptiMOS-7's reduced Qgd/Qgs ratio minimizes dead-time losses during diode emulation, while the 3.05 mΩ RDS(on) at full VGS drive keeps the synchronous FET's conduction loss below the high-side FET's switching loss contribution. A 4-switch buck converter using two IAUZN04S7L030 MOSFETs achieves peak efficiency above 95% at 30A output. The S3O8 3x3 mm² footprint enables high-power-density layouts where traditional DFN5x6 packages would be too tall for slim-profile VRM designs. Use a dedicated gate-driver IC such as the IR21271SPBF to provide the 10V VGS swing and adaptive dead-time control.
Recommended
E-Fuse and Hot-Swap Controller
The IAUZN04S7L030ATMA1's 3.05 mΩ RDS(on), 100A pulsed drain current, and AEC-Q101 automotive qualification make it ideal for e-fuse and hot-swap controller applications in 12V automotive distribution. In a typical e-fuse topology, this MOSFET sits in series with the load and a current-sense resistor, with a hot-swap controller IC monitoring the drain voltage and current. During a hot-plug event, the IAUZN04S7L030ATMA1 limits inrush current via gate slew-rate control while dissipating the transient power (P = VDS × ID) within its 58W SOA. The device's wide SOA and 175°C Tj rating give significant margin during repeated fault-clearing cycles, which is critical for automotive power distribution units (PDUs). Pair with the BTS4141NHUMA1 or BTN8982TAAUMA1 for a complete protected high-side switch.
Recommended
H-Bridge Motor Drive
In automotive H-bridge motor drives for throttle, EGR, or small pumps (up to ~10A peak), the IAUZN04S7L030ATMA1 forms the four switching positions in a full-bridge configuration. Two MOSFETs in each half-bridge leg handle the bidirectional current, while the 40V rating covers back-EMF spikes from 12V motors. The S3O8 3x3 mm² footprint allows a 4-FET full-bridge in less than 0.2 sq-in of board area, ideal for compact actuator modules. PWM frequencies of 20-50 kHz are well within OptiMOS-7's optimal switching range. The 100A pulsed drain current supports motor stall conditions without destruction. Use IRS2109STRPBF or IR21064STRPBF gate drivers with integrated bootstrap and dead-time generation.
Recommended
Battery Management System (BMS) Protection
In 12V automotive Battery Management Systems and super-capacitor bank protection, the IAUZN04S7L030ATMA1 provides the low-impedance disconnect path between the battery and the rest of the electrical system. During normal operation, the MOSFET's 3.05 mΩ RDS(on) keeps the voltage drop below 50 mV at 15A continuous, preserving usable battery capacity. In a fault event (over-current, reverse polarity, short circuit), the gate driver rapidly disables the MOSFET, with the 100A pulsed current rating handling the initial inrush before protection engages. The exposed-drain S3O8 pad allows direct PCB cooling without an external heatsink - critical in sealed BMS enclosures. Combine with the TLE72742DATMA1 or TLS805B1LDV50XUMA1 linear regulator for gate bias and housekeeping supply.
Recommended
Recommended Products Summary
Engineering reference data for IAUZN04S7L030ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N009ATMA1 | IAUC60N04S6N044ATMA1 | IAUC60N04S6N031HATMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-44 (S3O8) 3x3 mm² | PG-TSDSON-8-44 (S3O8) 3x3 mm² - same | PG-TSDSON-8-44 (S3O8) 3x3 mm² - same | PG-TSDSON-8-44 (S3O8) 3x3 mm² - same | PG-TSDSON-8-44 (S3O8) 3x3 mm² - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max at VGS=10V | 3.05 mΩ | 9 mΩ | 4.4 mΩ | 3.1 mΩ | 2.0 mΩ |
| Continuous Drain Current (ID, Tc=25°C) | 60 A | [DATA_NEEDED] | 60 A | 60 A | 100 A |
| Power Dissipation (PD, Tc=25°C) | 58 W | [DATA_NEEDED] | 44 W | 31 W | 20 W |
| Technology Generation | OptiMOS-7 | OptiMOS-7 | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Key Differentiators
- Latest-generation OptiMOS-7 silicon with ~30% lower switching loss (vs IAUC60N04S6N044ATMA1)
- Lowest RDS(on) in the S3O8 40V class (vs IAUCN04S7N009ATMA1)
- Compact S3O8 3x3 mm² footprint with 58W power dissipation (vs IAUC64N08S5L075ATMA1)
Design Notes
Estimated thermal analysis: At ID=30A continuous with VIN=12V and switching duty of 50% in a synchronous buck, the IAUZN04S7L030ATMA1 dissipates approximately 2.7W as synchronous FET (I² × RDS(on) = 900 × 0.00305 ≈ 2.7W). The S3O8 3x3 mm² package has theta_JA of roughly 50°C/W on 1 sq-in of 2-oz copper (JEDEC 4-layer test board), giving a 135°C temperature rise above 25°C ambient - very close to the 175°C Tj limit. For continuous 30A operation, expand the PCB copper pour to at least 2 sq-in of 2-oz copper, or add thermal vias to an internal copper plane.
The S3O8 exposed-drain pad (pin 5) on the underside of the package MUST be soldered to the PCB for both electrical connection and thermal dissipation. Use an array of thermal vias (0.3 mm drill, 0.5 mm pitch) directly under the pad to conduct heat to an internal copper plane or bottom-side heatsink. The source pins (pins 2-4, 6-8) should all be soldered and tied to a wide copper pour to share current and reduce parasitic source inductance.
Do NOT drive the gate with 5V logic levels - the IAUZN04S7L030ATMA1's VGS(th) is in the 1.5-2.5V range, but RDS(on) is only guaranteed at VGS=10V. At VGS=5V, RDS(on) may be 2-3× higher than the spec, causing unexpected overheating. Always use a gate-driver IC that swings to at least 10V (12V is recommended for lowest RDS(on)). Add a 10kΩ gate-source resistor to prevent floating-GS turn-on during high dV/dt transients on the drain.
In a synchronous buck converter, place the high-side and low-side MOSFETs as close together as possible to minimize the high-frequency switching loop. The IAUZN04S7L030ATMA1's source pins (multiple pads on the perimeter) should tie directly to the input capacitor ground via a short, wide trace. Keep the gate-drive traces short (under 5 mm) and route them over a continuous ground plane to avoid ringing. Place the bootstrap capacitor (typically 100 nF) directly between the BST and SW pins of the gate driver IC.
Compliance Information
AEC-Q101 (not AEC-Q100 - this is a discrete MOSFET) automotive qualified per Infineon datasheet. RoHS compliant. Halogen-free. Lead-free reflow-compatible.
