IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΩ | Infineon
MPN: IAUCN04S7N024HATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.9 | $1.90 |
| 10 | $1.72 | $17.20 |
| 100 | $1.45 | $145.00 |
| 500 | $1.28 | $640.00 |
| 1,000 | $1.12 | $1,120.00 |
| 5,000 | $0.98 | $4,900.00 |
IAUCN04S7N024HATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the workhorse of modern power electronics - a voltage-controlled switch used to convert, switch, and regulate electrical energy with high efficiency. Within the broader taxonomy, this dual-channel device belongs to the discrete semiconductor family, specifically power MOSFETs designed for high-current switching. The "dual" configuration integrates two independent N-channel MOSFETs in a single package, halving board space compared to two discrete parts while simplifying synchronous-rectifier and half-bridge layouts.
Key differentiators include a 40 V drain-source breakdown voltage suitable for 12 V automotive load-dump environments, a low typical R_DS(on) of 2.46 mΩ at V_GS = 10 V that minimizes conduction loss, and AEC-Q101 automotive qualification that supports deployment in engine-control units, body electronics, and 48 V mild-hybrid systems. The OptiMOS-7 platform reduces gate charge (Qg) and figure-of-merit (FOM = R_DS(on) × Qg) versus the prior OptiMOS-5 generation, enabling higher switching frequencies and lower driver losses in switched-mode power supplies.
The architecture uses a trench-gate cell design optimized for low FOM, with each die featuring an integrated source-connected sense option. The exposed top-side thermal pad of the PG-TDSON-8-56 package enables direct heat extraction to the PCB copper, supporting the 75 W Tc dissipation rating. The 5x6 mm footprint is industry-standard for Power-SO8 / SSO8 dual MOSFETs, allowing drop-in substitution from competing suppliers.
Typical applications include automotive LED lighting drivers, electric power steering (EPS), brake-system electronics, brushless DC (BLDC) motor drivers, and high-current DC-DC converter stages for ADAS domain controllers. The dual configuration also suits synchronous buck and half-bridge topologies where the low-side and high-side switches benefit from matched R_DS(on) and Qg.
When designing with this device, attention must be paid to gate-drive voltage (10 V recommended for full enhancement), PCB copper area for thermal management, and avalanche-energy handling for unclamped inductive switching events. Compared with single-MOSFET solutions, the dual package requires careful Kelvin-source layout to prevent common-source inductance from degrading switching performance.
This page synthesizes distributor pricing, AEC-Q101 same-family alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IAUCN04S7N024HATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN04S7N024HATMA1 (same form factor and footprint) — differing in Package, Mounting Type, Automotive Qualification, Technology, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN04S7N019GATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IAUCN04S7N027GATMA1
✅ Drop-In✓ In Stock
$0.72 / Unit
View Datasheet →IAUCN04S7N037GATMA1
✅ Drop-In✓ In Stock
$0.89 / Unit
View Datasheet →IAUCN04S7L042GATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →IAUC60N04S6L030HATMA1
✅ Drop-In✓ In Stock
$0.94 / Unit
View Datasheet →IAUCN04S7N024HATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS-7 40 V |
| Configuration | Dual N-Channel (independent) |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, Tj) | 100 A |
| On-Resistance R_DS(on) typ | 2.46 mΩ at V_GS = 10 V |
| Maximum Power Dissipation (Tc) | 75 W |
| Package | PG-TDSON-8-56 (SSO8 HB 5x6 mm) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Technology | OptiMOS-7 trench-gate |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Packing | Tape & Reel |
IAUCN04S7N024HATMA1 Pin Configuration
| Pin 1 | G1 — Gate of MOSFET 1 |
| Pin 2 | S1 — Source of MOSFET 1 |
| Pin 3 | D1 — Drain of MOSFET 1 |
| Pin 4 | D1 — Drain of MOSFET 1 (parallel pin for current sharing) |
| Pin 5 | D2 — Drain of MOSFET 2 |
| Pin 6 | D2 — Drain of MOSFET 2 (parallel pin for current sharing) |
| Pin 7 | S2 — Source of MOSFET 2 |
| Pin 8 | G2 — Gate of MOSFET 2 |
| Pin PAD | Thermal Pad — Exposed thermal pad, electrically connected to source of both MOSFETs (Kelvin-source) |
Safe Operating Area (SOA) - IAUCN04S7N024HATMA1
Typical Applications
IAUCN04S7N024HATMA1 is suitable for 6 applications: Automotive LED Headlight Driver, Electric Power Steering (EPS) Motor Drive, Brake System Electronics (ABS/ESC), 48 V Mild-Hybrid DC-DC Converter, Brushless DC (BLDC) Motor Drive, ADAS Domain Controller Power Supply.
Automotive LED Headlight Driver
The IAUCN04S7N024HATMA1 is well-suited for high-current LED headlight driver stages. Its 2.46 mΩ typical R_DS(on) per channel minimizes conduction loss in the buck converter switching FET, while the 40 V V_DS rating comfortably handles 12 V automotive bus with load-dump transients. AEC-Q101 qualification enables deployment in front-light modules requiring -40°C to +150°C operation. The dual-channel configuration can drive two LED strings or implement synchronous rectification, reducing component count. Compared with a single-MOSFET solution, the SSO8 5x6 dual package saves PCB area in space-constrained headlamp assemblies.
Recommended
Electric Power Steering (EPS) Motor Drive
In EPS systems the IAUCN04S7N024HATMA1's dual N-channel configuration enables a compact three-phase bridge inverter topology. The 100 A continuous drain current supports peak torque demands during parking maneuvers, while the 2.46 mΩ R_DS(on) keeps I²R losses low to maintain steering-assist efficiency. OptiMOS-7 technology's low Qg reduces gate-driver losses at the typical 20 kHz PWM frequency, helping meet ASIL-D thermal budgets. AEC-Q101 qualification is mandatory for safety-critical steering. The exposed thermal pad supports 75 W dissipation with proper PCB copper, critical for under-hood environments.
Recommended
Brake System Electronics (ABS/ESC)
Anti-lock braking and electronic stability control systems use the IAUCN04S7N024HATMA1 for solenoid driver and pump-motor switching. The 40 V V_DS rating tolerates 12 V brake-system transients, while the low R_DS(on) of 2.46 mΩ minimizes heat generation in the normally-energized ABS pump. The dual-package format fits the dual-solenoid driver topology. AEC-Q101 and -40°C to +150°C operation are mandatory for chassis-domain safety. The OptiMOS-7 cell design provides robust avalanche capability for unclamped inductive switching of brake solenoids.
Recommended
48 V Mild-Hybrid DC-DC Converter
For mild-hybrid DC-DC converters stepping 48 V down to 12 V, the IAUCN04S7N024HATMA1 is used on the low-voltage 12 V synchronous-rectifier side. Its 2.46 mΩ R_DS(on) and 100 A rating handle continuous 1-2 kW converter power with high efficiency. Note: this part is rated 40 V, so it is restricted to the 12 V rail side, not the 48 V high-voltage side. AEC-Q101 qualification supports automotive deployment. The dual configuration reduces part count in interleaved or multiphase converter designs.
Recommended
Brushless DC (BLDC) Motor Drive
The IAUCN04S7N024HATMA1 dual N-channel MOSFET supports BLDC motor inverter half-bridge configurations in applications such as HVAC blowers, water pumps, and cooling fans. With 2.46 mΩ R_DS(on) per channel, switching losses are minimized at 20-50 kHz PWM frequencies typical of automotive BLDC drives. The 100 A continuous drain current handles locked-rotor inrush, while 75 W power dissipation on Tc provides thermal margin. AEC-Q101 and the rugged OptiMOS-7 trench design deliver the reliability needed under-hood. The dual package enables compact 3-phase bridges with three parts.
Recommended
ADAS Domain Controller Power Supply
ADAS ECUs and domain controllers require multi-rail power with high current capability. The IAUCN04S7N024HATMA1 supports synchronous buck stages delivering processor core voltages at 20-40 A, where its 2.46 mΩ R_DS(on) minimizes conduction loss and OptiMOS-7's low Qg enables high switching frequencies (>500 kHz) for small inductor sizing. The 40 V V_DS rating tolerates input transients on 12 V automotive rails. The dual package supports multiphase buck topologies (two phases per part), reducing BOM and PCB area. AEC-Q101 qualification is required for safety-critical ADAS systems.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7N024HATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N019GATMA1 | IAUCN04S7N027GATMA1 | IAUCN04S7N037GATMA1 | IAUCN04S7L042GATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-56 (SSO8 HB 5x6) | PG-TDSON-8-56 (SSO8 HB 5x6) | PG-TDSON-8-56 (SSO8 HB 5x6) | PG-TDSON-8-56 (SSO8 HB 5x6) | PG-TDSON-8-56 (SSO8 HB 5x6) | PG-TDSON-8-56 (SSO8 HB 5x6) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS max (V) | 40 | 40 | 40 | 40 | 40 | 60 |
| R_DS(on) typ (mΩ) @ 10 V | 2.46 | 1.9 | 2.7 | 3.7 | 4.2 | 3.0 |
| Continuous I_D (A) | 100 | 100 | 100 | 100 | 100 | 100 |
| Power Dissipation Tc (W) | 75 | 75 | 75 | 75 | 75 | 75 |
| Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-6 |
Key Differentiators
- Lowest R_DS(on) in 40 V OptiMOS-7 family (vs IAUCN04S7L042GATMA1)
- Higher voltage margin vs higher-R_DS(on) 40 V parts (vs IAUC60N04S6L030HATMA1)
- OptiMOS-7 latest-generation performance (vs IAUC60N04S6L030HATMA1)
Design Notes
Estimated thermal analysis: at full-load current of 100 A per channel and R_DS(on) of 2.46 mΩ, conduction loss is approximately P = I²R = (100)² × 0.00246 = 24.6 W per channel. The PG-TDSON-8-56 (SSO8 HB 5x6) package supports 75 W at Tc, so PCB copper area must provide a thermal resistance below approximately 3-4 C/W to keep junction temperature rise below 100°C at ambient. Use at least 2 oz copper and an exposed-pad land pattern per Infineon's SSO8 HB layout guide.
The exposed thermal pad of the PG-TDSON-8-56 package is internally connected to both MOSFET sources. For switching applications, use a Kelvin-source connection where the gate-driver return is tied to the source pin (pin 2 or pin 7) rather than the thermal pad, to prevent common-source inductance from degrading switching performance and causing gate-oscillation. Place input capacitors and gate-drive resistors within 5 mm of the gate and source pins.
Do not exceed V_GS of ±20 V absolute maximum (20 V max per datasheet). Use a gate-drive voltage of 10 V for full enhancement and lowest R_DS(on); gate voltages below 6 V may leave the MOSFET in the linear region with high dissipation. Add a 10 kΩ gate-source resistor to prevent unwanted turn-on from dv/dt coupling. Verify avalanche-energy rating (EAS) for unclamped inductive switching events such as relay or solenoid turn-off.
OptiMOS-7 technology enables fast switching transitions (rise/fall times <10 ns), which can cause EMI issues. Add a gate-source resistor (typically 10-100 Ω) to slow the switching edge and reduce high-frequency ringing. Snubber circuits across drain-source may be needed for motor-drive applications. Follow Infineon's application note on EMI reduction for OptiMOS-7 in automotive environments.
Compliance Information
AEC-Q101 qualified (automotive MOSFET equivalent to AEC-Q100). RoHS and REACH compliant per Infineon product page. Halogen-free per JEDEC JS709B.
