IAUCN04S7N056DATMA1 vs IAUCN04S7L042GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N056DATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N056DATMA1
IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΞ© | Infineon
IAUCN04S7N056DATMA1 β ActiveInfineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N056DATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7N056DATMA1 | β |
| Series | OptiMOS 5 40V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) | 60 A (Tj) | β |
| RDS(on) (typ) | 5.59 mΞ© | β |
| Power Dissipation (Pd) | 41 W (Tc) | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55C to +175C (Tj) |
| Package | PG-TDSON-8-61 (TDSON EP, 5x6 mm) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Automotive Qualification | AEC-Q101 | β |
| Technology | OptiMOS 5 trench MOSFET | Trench N-Channel MOSFET |
| RoHS Status | Compliant | Compliant |
| Packaging Type | Tape & Reel | β |
| Product Family | β | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tj) | β | 77 A |
| Maximum Power Dissipation (PD, Tc) | β | 50 W |
| Polarity / Channel Type | β | N-Channel enhancement mode |
| Automotive Qualified | β | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| MSL Level | β | 1 |
| Packing | β | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | β | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg @ VGS=10V] |