IAUCN04S7N056DATMA1 vs IAUCN04S7L042GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7N056DATMA1 sa pamamagitan ng Infineon at IAUCN04S7L042GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon
IAUCN04S7N056DATMA1 ✓ NakahandaInfineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN04S7N056DATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7N056DATMA1 | — |
| Series | OptiMOS 5 40V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 60 A (Tj) | — |
| RDS(on) (typ) | 5.59 mΩ | — |
| Power Dissipation (Pd) | 41 W (Tc) | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | -55C to +175C (Tj) |
| Packhaging | PG-TDSON-8-61 (TDSON EP, 5x6 mm) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Automotive Qualification | AEC-Q101 | — |
| Technology | OptiMOS 5 trench MOSFET | Trench N-Channel MOSFET |
| Tindminan RoHS | Compliant | Compliant |
| Packaging Type | Tape & Reel | — |
| Product Family | — | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Level ng MSL | — | 1 |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |