IAUCN04S7N056DATMA1 vs IAUCN04S7L042GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N056DATMA1 dari Infineon dan IAUCN04S7L042GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7N056DATMA1 IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon

IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon

IAUCN04S7N056DATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N056DATMA1 IAUCN04S7L042GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7N056DATMA1 —
Series OptiMOS 5 40V —
Tipe Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 60 A (Tj) —
RDS(on) (typ) 5.59 mΩ —
Power Dissipation (Pd) 41 W (Tc) —
Rentang Suhu Kerja -55°C to +175°C -55C to +175C (Tj)
Paket PG-TDSON-8-61 (TDSON EP, 5x6 mm) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Tipe Mounting Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Automotive Qualification AEC-Q101 —
Technology OptiMOS 5 trench MOSFET Trench N-Channel MOSFET
Status RoHS Compliant Compliant
Packaging Type Tape & Reel —
Product Family — OptiMOS 7 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Level MSL — 1
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

Spek dan Sumber

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