IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon
MPN: IAUCN04S7N056DATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.05 | $1.05 |
| 10 | $0.95 | $9.50 |
| 100 | $0.85 | $85.00 |
| 500 | $0.76 | $380.00 |
| 1,000 | $0.68 | $680.00 |
IAUCN04S7N056DATMA1 Overview
A power MOSFET is a voltage-controlled three-terminal (gate, drain, source) semiconductor switch that uses an insulated-gate structure to modulate majority-carrier current flow. It belongs to the discrete-semiconductor hierarchy: MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET -> power switch. Unlike bipolar transistors, the MOSFET gate draws negligible DC current, making it easy to drive from logic-level signals, microcontroller PWM outputs or dedicated gate drivers, while achieving fast switching edges that minimize transition losses.
Key features of the IAUCN04S7N056DATMA1 include a very low R DS(on) of 5.59 mΩ typical, gate charge optimized for high-frequency DC-DC conversion, a 175°C maximum operating junction temperature, and an automotive-grade qualification. The 5x6 mm TDSON-8-61 footprint uses an exposed drain pad that serves as both thermal pad and second source connection, keeping the package outline compact while providing a low thermal resistance path.
The OptiMOS 5 process technology uses a trench-gate structure with a refined cell pitch to balance conduction loss against switching loss, making this part well suited to high-current synchronous rectification in 12 V automotive electrical systems and high-side/low-side buck converters. With its 5.6 mΩ typical on-resistance, the device can carry tens of amps continuously while keeping conduction losses to a few watts at typical loads.
Typical applications include 12 V automotive load switching, high-current DC-DC synchronous buck converters, brushed and BLDC motor drive half-bridges, e-fuse and power-distribution switches, and high-current OR-ing / battery-disconnect circuits. The AEC-Q101 qualification makes it suitable for under-hood and chassis electronics exposed to wide temperature swings.
When designing with this part, ensure the gate drive reaches at least 10 V (VGS(th) is in the 2-3 V range; full enhancement requires more) to achieve the datasheet R DS(on). Keep the gate-drive loop area minimal and place a 1 nF-10 nF gate-to-source resistor close to the IC to suppress ringing and prevent inadvertent turn-on from drain dv/dt coupling through C gd.
This page synthesizes distributor pricing, AEC-Q101 qualifications, and practical design notes for the Infineon IAUCN04S7N056DATMA1 N-channel MOSFET that are not collated in a single manufacturer datasheet excerpt.
Drop-in alternatives for IAUCN04S7N056DATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN04S7N056DATMA1 (same form factor and footprint) — differing in Package, Technology, Mounting Type, Automotive Qualification, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN04S7N037GATMA1
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View Datasheet →IAUCN04S7N019GATMA1
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View Datasheet →IAUCN04S7N027GATMA1
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View Datasheet →IAUC120N04S6N010ATMA1
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View Datasheet →IAUCN04S7N056DATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IAUCN04S7N056DATMA1 |
| Series | OptiMOS 5 40V |
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 60 A (Tj) |
| RDS(on) (typ) | 5.59 mΩ |
| Power Dissipation (Pd) | 41 W (Tc) |
| Operating Temperature Range | -55°C to +175°C |
| Package | PG-TDSON-8-61 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Technology | OptiMOS 5 trench MOSFET |
| RoHS Status | Compliant |
| Packaging Type | Tape & Reel |
IAUCN04S7N056DATMA1 Pin Configuration
| Pin 1 | Source — Source connection (Sense/source pin) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
| Pin EP | Drain — Exposed pad - Drain connection and main thermal path |
Safe Operating Area (DC, Tj=175°C)
Typical Applications
IAUCN04S7N056DATMA1 is suitable for 6 applications: 12V Automotive Load Switching, Synchronous Buck DC-DC Converter, BLDC Motor Drive Half-Bridge, Battery Disconnect / OR-ing Switch, Hot-Swap / Inrush Limiting, Power Distribution Module / eFuse.
12V Automotive Load Switching
The IAUCN04S7N056DATMA1 is well matched to 12 V automotive load switching thanks to its 40 V VDS rating, which provides comfortable transient headroom for 12 V bus spikes and load-dump events up to 35 V. With 60 A continuous current and 5.59 mΩ R DS(on), it can drive resistive loads, lamps, and small motors directly from a microcontroller GPIO through a gate driver. The AEC-Q101 qualification is required for under-hood ECUs, body controllers, and PDMs. Place a 100 kΩ gate pull-down to keep the device off during MCU reset, and use a TVS or snubber to clamp inductive transients within the 40 V VDS rating.
Recommended
Synchronous Buck DC-DC Converter
In a 12 V-to-3.3 V/5 V synchronous buck converter the IAUCN04S7N056DATMA1 serves as the low-side synchronous rectifier. Its 5.59 mΩ R DS(on) at VGS=10 V gives conduction losses around 0.5 W at 30 A, and the OptiMOS 5 trench technology delivers low Qg and Qgd for fast switching at 200-500 kHz. The 5x6 mm TDSON-8-61 footprint with an exposed drain pad simplifies PCB layout for direct thermal coupling to inner copper layers. Use a dedicated gate driver such as the 2EDL series to provide the >10 V drive and to prevent shoot-through by enforcing dead time. For a 600 kHz design the switching loss is dominated by Qg, so this part is a good fit at moderate frequencies.
Recommended
BLDC Motor Drive Half-Bridge
For automotive or industrial brushless-DC motor drives the IAUCN04S7N056DATMA1 functions as a high-current switching element in a three-phase half-bridge. With 60 A continuous and 41 W power dissipation at TC=25°C, it can drive mid-power BLDC motors up to about 1-2 kW with adequate heatsinking. The low Qg of the OptiMOS 5 platform keeps gate-driver losses low at 20-50 kHz PWM, and the 175°C junction rating provides safety margin for short stall conditions. Use a bootstrap-based gate driver such as the IRS21867STRPBF or 2ED21064S06JXUMA1, and place a 1-10 nF gate-source resistor to suppress ringing.
Recommended
Battery Disconnect / OR-ing Switch
The IAUCN04S7N056DATMA1 can be used as a low-side or high-side OR-ing / battery disconnect switch in redundant 12 V or 24 V power systems. Its 5.59 mΩ R DS(on) at full VGS gives <0.6 V drop at 100 A, and the AEC-Q101 qualification is appropriate for automotive e-fuse and power-distribution units. The 40 V VDS rating covers load-dump transients. Drive the gate from a charge pump or bootstrap supply to maintain full enhancement during on-state; for fast reverse-current blocking, add a comparator that monitors VDS and turns the MOSFET off within microseconds. A small TVS across drain-source protects against turn-off transients.
Recommended
Hot-Swap / Inrush Limiting
In a 12 V hot-swap controller the IAUCN04S7N056DATMA1 acts as the series load switch that limits inrush current when a downstream card is plugged into a live backplane. Its 5.59 mΩ R DS(on) keeps the steady-state voltage drop low, while the 40 V VDS rating tolerates the inductive ringing of connector engage. The exposed pad is essential for sinking the inrush dissipation, which can be tens of watts for tens of milliseconds. Choose a hot-swap controller with a dV/dt-controlled gate ramp to avoid SOA violations. The AEC-Q101 grade is also valued in telco and industrial cards where high-availability and thermal stress are concerns.
Recommended
Power Distribution Module / eFuse
In a smart e-fuse or solid-state circuit breaker the IAUCN04S7N056DATMA1 is the main pass element. With 60 A continuous and AEC-Q101 automotive qualification, it can replace mechanical fuses in PDMs and battery junction boxes. The 40 V VDS comfortably covers 12 V bus transients. A current-sense amplifier monitors drain current and triggers a fast gate pull-down on overcurrent, achieving microsecond-class fault isolation. The exposed drain pad dissipates fault energy for the brief interval before the controller disconnects the gate, so PCB copper area must be sized for the I²t of the trip curve.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7N056DATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N037GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N019GATMA1 | IAUCN04S7N027GATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-61 (5x6 mm) | PG-TDSON-8-61 (5x6 mm) - same | PG-TDSON-8-61 (5x6 mm) - same | PG-TDSON-8-61 (5x6 mm) - same | PG-TDSON-8-61 (5x6 mm) - same | PG-TDSON-8-61 (5x6 mm) - same | PG-TDSON-8-61 (5x6 mm) - same |
| VDS (max) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) (typ) | 5.59 mΩ | 3.7 mΩ (-34%) | 4.2 mΩ (-25%) | 5.0 mΩ (-11%) | 1.9 mΩ (-66%) | 2.7 mΩ (-52%) | 1.0 mΩ (-82%) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS 5 40V trench | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 40V |
Key Differentiators
- Lower RDS(on) at the same package size vs standard 40V TDSON-8-61 alternatives (vs IAUCN04S7L050HATMA1)
- AEC-Q101 qualified automotive grade at a competitive price point (vs Cross-brand 40V N-channel MOSFETs)
- Exposed-drain TDSON-8-61 package simplifies heatsink and PCB layout (vs DPAK alternatives)
Design Notes
Estimated: at 30 A continuous load on a 1 oz copper 4-layer PCB with 1 sq. inch of 2-oz top-copper area as heatsink, the IAUCN04S7N056DATMA1 dissipates I²×RDS(on) ≈ 30²×5.59 mΩ ≈ 5 W. With a typical 50°C/W RthJA on a moderate copper area, junction temperature rise is ~50°C×5 W = 25°C above ambient, keeping Tj well under the 150°C automotive derating limit. For continuous operation above 35 A, increase the 2-oz copper area to at least 2 sq. inches, or add a small heatsink to the exposed drain pad. The 41 W power dissipation is the absolute maximum at TC=25°C and is only achievable with the package case held at 25°C - not realistic in most real-world applications.
Place the IAUCN04S7N056DATMA1 with a 4x4 thermal-via array (0.3 mm via, 1 mm pitch) directly under the exposed drain pad to maximize heat transfer to inner copper layers. Keep the gate-trace width at least 0.4 mm and surround it with ground to minimize gate-loop inductance; a 1-10 nF gate-to-source resistor placed within 2 mm of the gate pin is recommended to suppress ringing caused by drain dv/dt coupling through Cgd. The high-current drain path should use wide copper pours (≥2 oz) on top and bottom layers stitched with multiple vias. Avoid routing signal traces under the device to keep noise coupling low.
Do not drive the IAUCN04S7N056DATMA1 gate directly from a 3.3 V microcontroller GPIO: VGS(th) is in the 2-3 V range but full R DS(on) requires VGS=10 V, otherwise on-resistance and dissipation are far higher than the datasheet. Use a dedicated gate driver (e.g. 2EDL5023U2DXTMA1 for half-bridge or 1EDN7136UXTSA1 for single-FET) to deliver a 10 V VGS. Also, do not exceed the 40 V VDS - 12 V automotive systems can show 35 V load-dump transients, so a TVS or snubber across drain-source is recommended. Finally, place a 100 kΩ gate pull-down resistor to ensure the device stays off during MCU reset and brown-out conditions.
Compliance Information
AEC-Q101 qualified per the Infineon automotive MOSFET family page and Arrow listing. RoHS and lead-free confirmed by Infineon product information. The part is a RoHS-compliant, halogen-free, Pb-free automotive-grade OptiMOS 5 40V N-channel MOSFET.
